Jinwoo Jeong, Eunsung Lee, H. Kim, C. Moon, K. Chun
{"title":"Si Via Interconnection Technique with Thermal Budget Design","authors":"Jinwoo Jeong, Eunsung Lee, H. Kim, C. Moon, K. Chun","doi":"10.1109/THETA.2007.363432","DOIUrl":null,"url":null,"abstract":"The silicon-through-via structure that can withstand high thermal budget of MEMS process is suggested for stacked MEMS package. The doped silicon is used as through- via material instead of metal. The key ideas and design are described in detail. SDB (silicon direct bonding) multi-stacking process and metal reflow technique are used for through-via fabrication. Through-via arrays with 40mum and 50mum spacing are fabricated. Resistance of the fabricated via is measured. The thermal characteristics of the silicon through-via are under evaluation","PeriodicalId":346940,"journal":{"name":"2007 International Conference on Thermal Issues in Emerging Technologies: Theory and Application","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Conference on Thermal Issues in Emerging Technologies: Theory and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/THETA.2007.363432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The silicon-through-via structure that can withstand high thermal budget of MEMS process is suggested for stacked MEMS package. The doped silicon is used as through- via material instead of metal. The key ideas and design are described in detail. SDB (silicon direct bonding) multi-stacking process and metal reflow technique are used for through-via fabrication. Through-via arrays with 40mum and 50mum spacing are fabricated. Resistance of the fabricated via is measured. The thermal characteristics of the silicon through-via are under evaluation
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