Effect of the free carrier concentration on the escape time of excitons in quantum devices

H. Cruz, A. Hernández-Cabrera, P. Aceituno
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Abstract

We have studied the effect of the electronic many-body interaction and of an external field on the tunneling escape rate in double barrier devices. Lifetimes of photoexcited excitons in quantum wells have been obtained at different carrier sheet densities by solving self-consistently the time dependent Schrodinger and Poisson equations. Results showed that the excitonic escape time is strongly affected by the area free carrier density in the quantum well.
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自由载流子浓度对量子器件中激子逃逸时间的影响
本文研究了电子多体相互作用和外场对双势垒器件隧穿逃逸率的影响。通过求解随时间变化的薛定谔和泊松方程,得到了不同载流子片密度下量子阱中光激发激子的寿命。结果表明,激子逃逸时间受量子阱中自由载流子密度的强烈影响。
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