{"title":"Analysis of GaSb-InAs Gate all around (GAA) p-i-n tunnel FET (TFET) for application as a bio-sensor","authors":"Ajay, Mridula Gupta, R. Narang, M. Saxena","doi":"10.1109/INEC.2016.7589324","DOIUrl":null,"url":null,"abstract":"The paper investigates the role of hetero Junction (HJ) GAA p-i-n TFET architecture for biosensing applications. The device offers better sensitivity and has been modeled in terms of various parameters such as surface potential, threshold voltage and drain current. Analytical modeling scheme is based the exact resultant solution of two-dimensional Poisson equation.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
The paper investigates the role of hetero Junction (HJ) GAA p-i-n TFET architecture for biosensing applications. The device offers better sensitivity and has been modeled in terms of various parameters such as surface potential, threshold voltage and drain current. Analytical modeling scheme is based the exact resultant solution of two-dimensional Poisson equation.
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