Three-phase multilevel inverter with reduced number of active power semiconductor switches for solar PV modules

2014 2nd International Conference on Electronic Design (ICED) Pub Date : 2014-08-01 DOI:10.1109/ICED.2014.7015824

M. A. Yusof, M. Othman, S. Lee, M. Roslan, J. Leong

{"title":"Three-phase multilevel inverter with reduced number of active power semiconductor switches for solar PV modules","authors":"M. A. Yusof, M. Othman, S. Lee, M. Roslan, J. Leong","doi":"10.1109/ICED.2014.7015824","DOIUrl":null,"url":null,"abstract":"This paper presents a three-phase switched-battery multilevel (SBM) inverter for solar photovoltaic (PV) applications. The proposed inverter requires less number of power MOSFETs and gate drivers, and therefore, it is expected to be more compact and reliable than the conventional cascaded H-bridge multilevel (CHBM) inverter. For example, sixty units of power MOSFETs are required to construct a three-phase 11-level CHBM inverter, whilst a SBM inverter with the same number of levels needs only 27 units. The switching losses of the SBM inverter are expected to be lower than that in conventional PWM-controlled inverters because the power MOSFETs in the SBM inverter are switched at a much lower frequency. In addition, the proposed inverter has an integrated charge mode operation which is very suitable for solar PV applications. The performance of an 11-level SBM inverter has been evaluated using PSIM software and the simulation results confirm that the proposed inverter is capable of producing low total harmonic distortion (THD) AC voltages without the need of bulky filters.","PeriodicalId":143806,"journal":{"name":"2014 2nd International Conference on Electronic Design (ICED)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Electronic Design (ICED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICED.2014.7015824","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

Abstract

This paper presents a three-phase switched-battery multilevel (SBM) inverter for solar photovoltaic (PV) applications. The proposed inverter requires less number of power MOSFETs and gate drivers, and therefore, it is expected to be more compact and reliable than the conventional cascaded H-bridge multilevel (CHBM) inverter. For example, sixty units of power MOSFETs are required to construct a three-phase 11-level CHBM inverter, whilst a SBM inverter with the same number of levels needs only 27 units. The switching losses of the SBM inverter are expected to be lower than that in conventional PWM-controlled inverters because the power MOSFETs in the SBM inverter are switched at a much lower frequency. In addition, the proposed inverter has an integrated charge mode operation which is very suitable for solar PV applications. The performance of an 11-level SBM inverter has been evaluated using PSIM software and the simulation results confirm that the proposed inverter is capable of producing low total harmonic distortion (THD) AC voltages without the need of bulky filters.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

减少有源功率半导体开关数量的太阳能光伏组件三相多电平逆变器

本文提出了一种用于太阳能光伏(PV)应用的三相开关电池多电平(SBM)逆变器。该逆变器需要更少的功率mosfet和栅极驱动器，因此，它有望比传统的级联h桥多电平(CHBM)逆变器更紧凑和可靠。例如，构建一个三相11电平CHBM逆变器需要60个功率mosfet单元，而具有相同电平数的SBM逆变器只需要27个单元。由于SBM逆变器中的功率mosfet的开关频率要低得多，因此SBM逆变器的开关损耗预计将低于传统pwm控制的逆变器。此外，所提出的逆变器具有集成充电模式操作，非常适合太阳能光伏应用。利用PSIM软件对11电平SBM逆变器的性能进行了评估，仿真结果证实，该逆变器能够产生低总谐波失真(THD)的交流电压，而无需笨重的滤波器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

2014 2nd International Conference on Electronic Design (ICED)

自引率

0.00%

发文量