{"title":"A V-Band BiCMOS power detector for millimeter-wave applications","authors":"A. Serhan, E. Lauga-Larroze, J. Fournier","doi":"10.1109/ICM.2013.6735000","DOIUrl":null,"url":null,"abstract":"This paper presents a V-Band Bi-CMOS 55nm power detector designed to be used in mmWave circuits for automatic level control (ALC) and built-in self test (BIST). The proposed detector shows a simulated detection range of about 35 dB in the 50 GHz to 90 GHz frequency band. Sensitivity to -30 dBm input power is demonstrated thanks to the use of common base bipolar transistor as input stage. The design and optimization steps are described in order to provide a general methodology to design high performance power detectors.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2013.6735000","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper presents a V-Band Bi-CMOS 55nm power detector designed to be used in mmWave circuits for automatic level control (ALC) and built-in self test (BIST). The proposed detector shows a simulated detection range of about 35 dB in the 50 GHz to 90 GHz frequency band. Sensitivity to -30 dBm input power is demonstrated thanks to the use of common base bipolar transistor as input stage. The design and optimization steps are described in order to provide a general methodology to design high performance power detectors.
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