Junctionless transistors for dynamic memory and sensing applications

Abstract

In this work, we report on the feasibility and design optimization of impact ionization junctionless transistors for dynamic memory and bio-sensing applications. Optimization of snapback and the hysteresis effects in the output characteristics to achieve high current margin between the two reading states of a dynamic memory are presented. The optimized cell offers nearly 4 orders of difference in the reading current of the two logic states. A possible application of these JL transistors for designing an ultra-sensitive bio-sensor is also outlined and compared with the conventional inversion mode transistor design.