Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460329
S. Nakano, Y. Takeuchi
Numerical simulation of crystalline germanium (c-Ge) heterojunction solar cell was performed using simulation software AFORS-HET. We confirmed that a difference of the minority carrier band offset of n-type hydrogenated amorphous silicon (a-Si:H(n))/c-Ge(p) and a-Si:H(p)/c-Ge(n) structure has great impacts for solar cell performance. The a-Si:H(p)/c-Ge(n) valence band offset of 0.96 eV induces larger band bending in the c-Ge(n) absorber compared with the a-Si:H(n)/c-Ge(p) whose conduction band offset is 0.1 eV. The large band bending can reduce interface recombination due to the reduction of the majority carrier density near the interface. However the offset of 0.96 eV is too large and impedes photogenerated carrier collection. We applied crystalline-Si(p) whose band gap is lower than a-Si:H(p) as the emitter and confirmed that the current limitation was avoided keeping large band bending. On the other hand, although the band bending of the a-Si:H(n)/c-Ge(p) is too small to reduce the interface recombination, the donor doping to the interface layer, whose cell performance improvement effect was experimentally demonstrated, induces large band bending and improves cell performance.
{"title":"Experimental and simulation studies of interface properties of crystalline germanium heterojunction solar cells","authors":"S. Nakano, Y. Takeuchi","doi":"10.1109/INEC.2014.7460329","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460329","url":null,"abstract":"Numerical simulation of crystalline germanium (c-Ge) heterojunction solar cell was performed using simulation software AFORS-HET. We confirmed that a difference of the minority carrier band offset of n-type hydrogenated amorphous silicon (a-Si:H(n))/c-Ge(p) and a-Si:H(p)/c-Ge(n) structure has great impacts for solar cell performance. The a-Si:H(p)/c-Ge(n) valence band offset of 0.96 eV induces larger band bending in the c-Ge(n) absorber compared with the a-Si:H(n)/c-Ge(p) whose conduction band offset is 0.1 eV. The large band bending can reduce interface recombination due to the reduction of the majority carrier density near the interface. However the offset of 0.96 eV is too large and impedes photogenerated carrier collection. We applied crystalline-Si(p) whose band gap is lower than a-Si:H(p) as the emitter and confirmed that the current limitation was avoided keeping large band bending. On the other hand, although the band bending of the a-Si:H(n)/c-Ge(p) is too small to reduce the interface recombination, the donor doping to the interface layer, whose cell performance improvement effect was experimentally demonstrated, induces large band bending and improves cell performance.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"20 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114043086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460439
Q. Lin, D. Lorenzen, Danyang Wang
(Ba0.85Ca0.15)(Ti0.9Zr0.1)O3 (BCZT) -xSm2O3 nanocomposite films with different molar ratio x were successfully deposited on SrRuO3-coated (001) SrTiO3 substrates by pulsed laser deposition. The strain state of nanocomposites is closely related to planar lattice mismatch between film and substrate, and vertical lattice mismatch between secondary phase and film matrix. It is found that the leakage current density was greatly suppressed by the secondary phase in Sm2O3-rich nanocomposites, while superior piezoelectric response was obtained in BCZT-0.125Sm2O3 with an effective piezoelectric coefficient d33,eff=137±5pm/V.
{"title":"Tailoring the physical properties of (Ba, Ca)(Ti, Zr)O3 - xSm2O3 nanocomposite films","authors":"Q. Lin, D. Lorenzen, Danyang Wang","doi":"10.1109/INEC.2014.7460439","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460439","url":null,"abstract":"(Ba<sub>0.85</sub>Ca<sub>0.15</sub>)(Ti<sub>0.9</sub>Zr<sub>0.1</sub>)O<sub>3</sub> (BCZT) -xSm<sub>2</sub>O<sub>3</sub> nanocomposite films with different molar ratio x were successfully deposited on SrRuO<sub>3</sub>-coated (001) SrTiO<sub>3</sub> substrates by pulsed laser deposition. The strain state of nanocomposites is closely related to planar lattice mismatch between film and substrate, and vertical lattice mismatch between secondary phase and film matrix. It is found that the leakage current density was greatly suppressed by the secondary phase in Sm<sub>2</sub>O<sub>3</sub>-rich nanocomposites, while superior piezoelectric response was obtained in BCZT-0.125Sm<sub>2</sub>O<sub>3</sub> with an effective piezoelectric coefficient d<sub>33,eff</sub>=137±5pm/V.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120952785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460417
M. Sohgawa
A multifunctional tactile sensor which can detect approximation, contact, slipping, and surface texture of the target has been developed. The sensor is composed of multiple MEMS cantilevers fabricated on Si substrate embedded in PDMS, and can detect normal and shear forces. By indenting and sliding the sensor on the object surface, output depending on hardness, friction, and roughness, etc. can be obtained. Moreover, a function for detection of proximity was integrated monolithically through photo-sensitivity of Si substrate.
{"title":"Multifunctional tactile sensors using MEMS cantilevers","authors":"M. Sohgawa","doi":"10.1109/INEC.2014.7460417","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460417","url":null,"abstract":"A multifunctional tactile sensor which can detect approximation, contact, slipping, and surface texture of the target has been developed. The sensor is composed of multiple MEMS cantilevers fabricated on Si substrate embedded in PDMS, and can detect normal and shear forces. By indenting and sliding the sensor on the object surface, output depending on hardness, friction, and roughness, etc. can be obtained. Moreover, a function for detection of proximity was integrated monolithically through photo-sensitivity of Si substrate.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125629124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460326
Ryohei Sano, Jun Yamasaki, Hideaki Goto, Takuma Ishida, Yusuke Fujimagari, Kazuki Hoshi, Y. Fukushi, Y. Nishioka
We fabricated a totally flexible glucose biofuel cell containing conductive porous polypyrrole (PPy) electrodes modified with enzymes. The porous PPy films were galvanostatically synthesized and glued on a polyimide flexible sheet to form porous conductive electrodes. The surface of anode was modified with glucose oxidase and a ferrocene mediator, and the surface of cathode was deposited with bilirubin oxidase. The generated power in the biofuel cell with PPy electrodes was 5 times higher than that with carbon electrodes.
{"title":"A flexible glucose biofuel cell with porous polypyrrole electrodes modified with enzymes","authors":"Ryohei Sano, Jun Yamasaki, Hideaki Goto, Takuma Ishida, Yusuke Fujimagari, Kazuki Hoshi, Y. Fukushi, Y. Nishioka","doi":"10.1109/INEC.2014.7460326","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460326","url":null,"abstract":"We fabricated a totally flexible glucose biofuel cell containing conductive porous polypyrrole (PPy) electrodes modified with enzymes. The porous PPy films were galvanostatically synthesized and glued on a polyimide flexible sheet to form porous conductive electrodes. The surface of anode was modified with glucose oxidase and a ferrocene mediator, and the surface of cathode was deposited with bilirubin oxidase. The generated power in the biofuel cell with PPy electrodes was 5 times higher than that with carbon electrodes.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115790507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460414
Md. Masum Billah, R. Khan, A. Shafie, Rini Akmeliawati
Tendon driven actuators are getting mature in electroactive polymer (EAP) researches. Research and development of the dielectric elastomer (DE) actuator from EAP family, have produced significant progress for decades. Dielectric elastomer is used in this paper to model a micro actuator platform. The parallel platform designing in this paper consists of the kinematics of the platform that is suited for micro structure of the robotic link. This may use for redundant manipulator or snake robot structure. DE is silicon artificial muscles that will actuated by applying voltage which perform a great actuation due to its linear large deflection. A remarkable amount of work has focused on delivering the feasibility of the robotic application of DE material. However, few commercial products equipped with polymer actuators have been introduced in the market, probably because most of the research has been dedicated either to discovering new actuation properties of the polymeric material. Therefore, this polymer is used to model the tendon driven parallel platform actuator for robotic application in this research. In this actuator design, both the upper and lower platforms are of configurations of equilateral triangles with DE cables attached close to the vertices. One DE cable attaches each of the vertices of the lower platform to the vertices directly above it on the upper platform. The three tendons thus enable the platform to exhibit 3 degrees of freedom (DOF). The dielectric polymers are attached with the three edges of the platforms that act like compression-tension cable because of their linear deformation characteristics. Therefore the platform of the DE actuator model is achieved in this research. This actuator can be used to develop redundant robot like snake robot or elephant trunk robot.
{"title":"Electroactive polymer actuated tendon driven micro actuator for robotic application","authors":"Md. Masum Billah, R. Khan, A. Shafie, Rini Akmeliawati","doi":"10.1109/INEC.2014.7460414","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460414","url":null,"abstract":"Tendon driven actuators are getting mature in electroactive polymer (EAP) researches. Research and development of the dielectric elastomer (DE) actuator from EAP family, have produced significant progress for decades. Dielectric elastomer is used in this paper to model a micro actuator platform. The parallel platform designing in this paper consists of the kinematics of the platform that is suited for micro structure of the robotic link. This may use for redundant manipulator or snake robot structure. DE is silicon artificial muscles that will actuated by applying voltage which perform a great actuation due to its linear large deflection. A remarkable amount of work has focused on delivering the feasibility of the robotic application of DE material. However, few commercial products equipped with polymer actuators have been introduced in the market, probably because most of the research has been dedicated either to discovering new actuation properties of the polymeric material. Therefore, this polymer is used to model the tendon driven parallel platform actuator for robotic application in this research. In this actuator design, both the upper and lower platforms are of configurations of equilateral triangles with DE cables attached close to the vertices. One DE cable attaches each of the vertices of the lower platform to the vertices directly above it on the upper platform. The three tendons thus enable the platform to exhibit 3 degrees of freedom (DOF). The dielectric polymers are attached with the three edges of the platforms that act like compression-tension cable because of their linear deformation characteristics. Therefore the platform of the DE actuator model is achieved in this research. This actuator can be used to develop redundant robot like snake robot or elephant trunk robot.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133559883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460461
T. Ko, T. Lu, Jung-Ron Chen, S. Ou, Chia-Ming Chang, H. Kuo, D. Lin
The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 °C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5×1010 cm-2 to 1.5×1010 cm-2 along [0001]GaN and stacking faults were decreased from 8.7× 105 cm-1 to 4.8× 105 cm-1 after the sample was annealed at 1000 °C. Room temperature photoluminescence measurements showed band edge emission intensity was enhanced up to 2.6 folds compared to the regular a-plane GaN film. Furthermore, corresponding cathode luminescence images reveal larger emission area for a-plane GaN with annealing than those without annealing, which was attributed to reduction of the nonradiative recombination centers. A series of experiments confirm this annealing process could be useful for further applications of GaN-based optoelectric devices.
{"title":"Effect of thermal annealing on a-plane GaN grown on r-plane sapphire","authors":"T. Ko, T. Lu, Jung-Ron Chen, S. Ou, Chia-Ming Chang, H. Kuo, D. Lin","doi":"10.1109/INEC.2014.7460461","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460461","url":null,"abstract":"The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 °C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5×10<sup>10</sup> cm<sup>-2</sup> to 1.5×10<sup>10</sup> cm<sup>-2</sup> along [0001]<sub>GaN</sub> and stacking faults were decreased from 8.7× 10<sup>5</sup> cm<sup>-1</sup> to 4.8× 10<sup>5</sup> cm<sup>-1</sup> after the sample was annealed at 1000 °C. Room temperature photoluminescence measurements showed band edge emission intensity was enhanced up to 2.6 folds compared to the regular a-plane GaN film. Furthermore, corresponding cathode luminescence images reveal larger emission area for a-plane GaN with annealing than those without annealing, which was attributed to reduction of the nonradiative recombination centers. A series of experiments confirm this annealing process could be useful for further applications of GaN-based optoelectric devices.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114407331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460413
Tsung-Cheng Chen, Wei-Yin Zeng, Y. Liao, Anirban Das, Chia‐Ming Yang, Chao‐Sung Lai
LAPS with different thickness of P-type silicon wafers are first investigated for photocurrent, operation frequency of applied ac signal and pH sensing performance, respectively. A high dielectric constant material, niobium oxide (NbOx), was directly deposited as the sensing membrane by reactive radio frequency sputtering. pH sensitivity is around 60.3 mV/pH with linearity of 99.1%. Thin Si substrate has higher photovoltage, especially with high-frequency ac signal. With ac signal of 20kHz, photovoltage of 350 um Si shows comparable to 500 um Si. Even in frequency higher than 50 kHz, fast scanning speed could be achieved by analog mirror and red laser for chemical image sensor.
首先研究了不同厚度p型硅片的LAPS的光电流、外加交流信号的工作频率和pH传感性能。采用反应性射频溅射法制备高介电常数材料氧化铌(NbOx)作为传感膜。pH敏感性约为60.3 mV/pH，线性度为99.1%。薄硅衬底具有较高的光电压，特别是对高频交流信号。在交流信号为20kHz时，350 um Si的光电压显示与500 um Si相当。即使在频率高于50 kHz的情况下，化学图像传感器用模拟反射镜和红色激光也能实现快速扫描。
{"title":"High photocurrent and operation frequency for light-addressable potentiometric sensor by thinner Si substrate","authors":"Tsung-Cheng Chen, Wei-Yin Zeng, Y. Liao, Anirban Das, Chia‐Ming Yang, Chao‐Sung Lai","doi":"10.1109/INEC.2014.7460413","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460413","url":null,"abstract":"LAPS with different thickness of P-type silicon wafers are first investigated for photocurrent, operation frequency of applied ac signal and pH sensing performance, respectively. A high dielectric constant material, niobium oxide (NbOx), was directly deposited as the sensing membrane by reactive radio frequency sputtering. pH sensitivity is around 60.3 mV/pH with linearity of 99.1%. Thin Si substrate has higher photovoltage, especially with high-frequency ac signal. With ac signal of 20kHz, photovoltage of 350 um Si shows comparable to 500 um Si. Even in frequency higher than 50 kHz, fast scanning speed could be achieved by analog mirror and red laser for chemical image sensor.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122025672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460321
H. Matsumoto
In the past decade, “ionic liquids (ILs)”, which are liquids at room temperature and contain only cations and anions without any molecular species, like water and organic solvents have attracted much attention as novel liquid electrolytes for electrochemical devices, such as the lithium ion battery (LIB), due to their unique physical and electrochemical properties. We have prepared low melting and low viscosity ILs to improve ion transport in the ILs and the resulting device performances. Especially, in the case of the LIBs, the structure of the negatively charged ion (anion) was found to be one of the key components that governs not only the ion transport resistance, but also the interfacial charge transfer resistance on both the negative and positive electrodes.
{"title":"Review: Ionic liquids as a potential electrolyte for energy devices","authors":"H. Matsumoto","doi":"10.1109/INEC.2014.7460321","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460321","url":null,"abstract":"In the past decade, “ionic liquids (ILs)”, which are liquids at room temperature and contain only cations and anions without any molecular species, like water and organic solvents have attracted much attention as novel liquid electrolytes for electrochemical devices, such as the lithium ion battery (LIB), due to their unique physical and electrochemical properties. We have prepared low melting and low viscosity ILs to improve ion transport in the ILs and the resulting device performances. Especially, in the case of the LIBs, the structure of the negatively charged ion (anion) was found to be one of the key components that governs not only the ion transport resistance, but also the interfacial charge transfer resistance on both the negative and positive electrodes.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128472348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460459
C. Tan, Xiangchen Chen
The random dopant fluctuation (RDF) induced threshold voltage variation are compared between a junctionless and an inversion mode gate-all-around (GAA) silicon nanowire FET. We found that the RDF induced variation of junctionless GAA nanowire FET is larger and more sensitive than that of the inversion mode GAA nanowire FET, and it is contributed by the higher doping concentration in the nanowire of the junctionless device. The impact of RDF on the Id-Vg of the FETs found in this work also suggest appropriate operating conditions for the FETs in order to reduce the impact of RDF.
{"title":"Random dopant fluctuation in gate-all-around nanowire FET","authors":"C. Tan, Xiangchen Chen","doi":"10.1109/INEC.2014.7460459","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460459","url":null,"abstract":"The random dopant fluctuation (RDF) induced threshold voltage variation are compared between a junctionless and an inversion mode gate-all-around (GAA) silicon nanowire FET. We found that the RDF induced variation of junctionless GAA nanowire FET is larger and more sensitive than that of the inversion mode GAA nanowire FET, and it is contributed by the higher doping concentration in the nanowire of the junctionless device. The impact of RDF on the Id-Vg of the FETs found in this work also suggest appropriate operating conditions for the FETs in order to reduce the impact of RDF.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132527879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460426
Yi-Jen Huang, I-Chung Shih, Shih-Chun Chao, C. Wen, Jr-hau He, Si-Chen Lee
A fully transparent resistive random access memory (T-RRAM) device based on an ultrathin a-TiOx storage layer sandwiched between the top ITO and bottom FTO electrodes (ITO/a-TiOx/FTO) was fabricated on the glass substrate. The memory device exhibited not only good optical transmittance (~80%) but also a bipolar resistive switching characteristic with low operation voltage (-0.5V/+1V), low operation current (500μA), high ROFF/RON ratio (>100), reasonable endurance (>102 cycles), and retention characteristics (104 s). The resistive switching mechanism could be explained by the formation and rupture of the oxygen vacancies induced conductive filament near ITO and a-TiOx interface. Our devices demonstrated the great potential for future transparent electronic applications.
在玻璃基板上制备了一种基于夹在顶部ITO和底部FTO电极之间的超薄A - tiox存储层(ITO/ A - tiox /FTO)的全透明电阻随机存取存储器(T-RRAM)器件。该存储器件不仅具有良好的透光率(~80%)，而且具有低工作电压(-0.5V/+1V)、低工作电流(500μA)、高ROFF/RON比(>100)、合理的续航时间(>102次)和保持特性(104 s)的双极电阻开关特性，其电阻开关机理可以解释为在ITO和a- tiox界面附近氧空位诱导导电丝的形成和断裂。我们的设备展示了未来透明电子应用的巨大潜力。
{"title":"Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiOx films and its resistive switching characteristics","authors":"Yi-Jen Huang, I-Chung Shih, Shih-Chun Chao, C. Wen, Jr-hau He, Si-Chen Lee","doi":"10.1109/INEC.2014.7460426","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460426","url":null,"abstract":"A fully transparent resistive random access memory (T-RRAM) device based on an ultrathin a-TiOx storage layer sandwiched between the top ITO and bottom FTO electrodes (ITO/a-TiOx/FTO) was fabricated on the glass substrate. The memory device exhibited not only good optical transmittance (~80%) but also a bipolar resistive switching characteristic with low operation voltage (-0.5V/+1V), low operation current (500μA), high ROFF/RON ratio (>100), reasonable endurance (>102 cycles), and retention characteristics (104 s). The resistive switching mechanism could be explained by the formation and rupture of the oxygen vacancies induced conductive filament near ITO and a-TiOx interface. Our devices demonstrated the great potential for future transparent electronic applications.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133812619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：