Design of implantable microprobe for silicon wet bulk micromachining

E. Gusev, A.V. Saryev, S. V. Malokhatko, O. Ageev
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Abstract

The paper presents the design features of silicon microprobe with a cross-sectional size less than 100 μm, taking into account the number of electrodes, as well as the conditions of anisotropic wet etching. Analytical calculations were carried out for the probe structure, represented by n-regions of various widths, carrying up to 2n-1 electrodes. The dependences of bottom width of the trapezoidal section of the probe and width of related mask on the thickness and top width of the probe are obtained. The permissible dimension ranges for several cases of one- to four-level microprobes have been established. The correction value of the mask size was estimated, reflecting the effect of etching conditions on the geometry of the probe. Modeling was carried out in an anisotropic wet etching simulator taking into account the conditions of KOH etching (in 20-40% solution at 60-80°C). It allowed to refine the results of the analytical calculations, refine dimensions of the silicon microprobe structure, the geometry of related masks, as well as the extent undercutting effect. The obtained results could be used in development of silicon microprobes formed by anisotropic wet etching.
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用于硅湿体微加工的可植入微探针设计
本文在考虑电极数量和各向异性湿法蚀刻条件的基础上,提出了截面尺寸小于100 μm的硅微探针的设计特点。对探针结构进行了分析计算,探针结构由不同宽度的n个区域表示,携带多达2n-1个电极。得到了探头梯形截面底部宽度和相关掩模宽度与探头厚度和顶部宽度的关系。建立了几种一至四级微探头的允许尺寸范围。估计了掩模尺寸的校正值,反映了蚀刻条件对探针几何形状的影响。在各向异性湿法蚀刻模拟器中进行建模,考虑了KOH蚀刻条件(在20-40%的溶液中,60-80°C)。它允许改进分析计算的结果,改进硅微探针结构的尺寸,相关掩模的几何形状,以及削弱效应的程度。所得结果可用于各向异性湿法刻蚀制备硅微探针。
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