Simulation on Low Energy Ion Implantation into Ge and SiGe With Molecular Dynamics Method

Abstract

Using binomial distribution, we have created a structure to describe Si 1-x Ge x substrate, so ion implantation into Ge and Si 1-x Ge x can be simulated based on Molecular dynamics method. ZBL potential is applied to describe interaction between implanted ion and target atoms. David Cai's electronic stopping power model is applied to calculate collision between implanted ion and electronics. The results of boron implantation into pure Ge and Si 1-x Ge x are compared with SIMS data. The phenomenon of fluence loss due to surface sputtering and backscattering is investigated. Factors affecting range profile and fluence loss including Ge fraction and implant tilt is also presented in this paper.This electronic document is a "live" template. The various components of your paper [title, text, heads, etc.] are already defined on the style sheet, as illustrated by the portions given in this document.