LDO with a Dual Complementary Buffer Architecture

Mihai Dicianu, Vlad Ionescu, C. Dan
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Abstract

This paper presents a 5V LDO architecture with a buffered error amplifier. This is achieved by using a functional block called a dual complementary buffer which consists of two buffers, one using a NMOS output transistor, the other a PMOS output transistor. The main advantage of this architecture is the rail-to-rail output voltage swing of the buffer, improving performance in both the tracking and the regulating operating regions of the voltage regulator. Simulation results show load regulation of 4.47uV/mA and line regulation of 3.92uV/v. The maximum input voltage is 40V and the maximum load current is 200mA. The LDO was simulated using a 0.8um BiCMOS process.
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具有双互补缓冲结构的LDO
本文提出了一种带缓冲误差放大器的5V LDO结构。这是通过使用称为双互补缓冲器的功能块来实现的,该缓冲器由两个缓冲器组成,一个使用NMOS输出晶体管,另一个使用PMOS输出晶体管。这种结构的主要优点是缓冲器的轨到轨输出电压摆幅,提高了电压调节器的跟踪和调节工作区域的性能。仿真结果表明,负载调节为4.47uV/mA,线路调节为3.92uV/v。最大输入电压40V,最大负载电流200mA。采用0.8um BiCMOS工艺模拟LDO。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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