{"title":"LDO with a Dual Complementary Buffer Architecture","authors":"Mihai Dicianu, Vlad Ionescu, C. Dan","doi":"10.1109/SMICND.2018.8539791","DOIUrl":null,"url":null,"abstract":"This paper presents a 5V LDO architecture with a buffered error amplifier. This is achieved by using a functional block called a dual complementary buffer which consists of two buffers, one using a NMOS output transistor, the other a PMOS output transistor. The main advantage of this architecture is the rail-to-rail output voltage swing of the buffer, improving performance in both the tracking and the regulating operating regions of the voltage regulator. Simulation results show load regulation of 4.47uV/mA and line regulation of 3.92uV/v. The maximum input voltage is 40V and the maximum load current is 200mA. The LDO was simulated using a 0.8um BiCMOS process.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2018.8539791","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a 5V LDO architecture with a buffered error amplifier. This is achieved by using a functional block called a dual complementary buffer which consists of two buffers, one using a NMOS output transistor, the other a PMOS output transistor. The main advantage of this architecture is the rail-to-rail output voltage swing of the buffer, improving performance in both the tracking and the regulating operating regions of the voltage regulator. Simulation results show load regulation of 4.47uV/mA and line regulation of 3.92uV/v. The maximum input voltage is 40V and the maximum load current is 200mA. The LDO was simulated using a 0.8um BiCMOS process.