Computational materials design®: Realization of the switching mechanism in RRAM

Abstract

Computational materials design® (CMD®) has been proven to be a very powerful tool for developing novel materials through obtaining relevant understanding of the basic principles underlying a system. Among others, realization of the switching mechanism in resistance random access memory (RRAM) devices has been an interesting field. Here, we propose a mechanism of resistive switching in RRAM based on the change in the electronic properties of the transition metal oxide (TMO) layer through the occurrence of rowed oxygen vacancies.