Avashesh Dubey, Ajay, Mridula Gupta, R. Narang, M. Saxena
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引用次数: 0
Abstract
An Analytical model of Junctionless Double Gate Radiation sensitive FET (RADFET) is developed. From 2D Poisson equation using variable separation technique an analytical model is derived. This model is verified using ATLAS device simulation software. Further, the sensitivity of the JLDG RADFET is investigated and compared with Conventional DG RADFET.
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