{"title":"Humidity sensor based on lossy mode resonances on an etched single mode fiber","authors":"J. Ascorbe, J. Corres, I. Matías, F. Arregui","doi":"10.1109/ICSENST.2015.7438424","DOIUrl":null,"url":null,"abstract":"Here we present a new structure to fabricate optical fiber sensors. This structure consists on an etched single mode optical fiber coated with a thin film of a semiconductor material by means of sputtering. The optical fiber was etched with hydrofluoric acid until it reaches 19 μm of diameter. Then it was attached to a U-holder and coated with the indium oxide nanocoating. The thin film generates a lossy mode resonance and when the relative humidity increases, the wavelength of the resonance shifts. Changes of 30% to 80% RH have been applied to the device obtaining a wavelength shift of 12 nm.","PeriodicalId":375376,"journal":{"name":"2015 9th International Conference on Sensing Technology (ICST)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 9th International Conference on Sensing Technology (ICST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENST.2015.7438424","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Here we present a new structure to fabricate optical fiber sensors. This structure consists on an etched single mode optical fiber coated with a thin film of a semiconductor material by means of sputtering. The optical fiber was etched with hydrofluoric acid until it reaches 19 μm of diameter. Then it was attached to a U-holder and coated with the indium oxide nanocoating. The thin film generates a lossy mode resonance and when the relative humidity increases, the wavelength of the resonance shifts. Changes of 30% to 80% RH have been applied to the device obtaining a wavelength shift of 12 nm.