E. Gatard, P. Bouysse, R. Sommet, R. Quéré, J. Bureau, P. Ledieu, M. Stanislawiak, C. Tolant
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引用次数: 1
Abstract
A p-i-n diode model for switching and limiting applications is presented. The model allows to simulate the I-region store charge effect that governs the impedance-frequency characteristic of the diode. The model also includes recombination phenomenon in the heavily doped region and junctions effects. The diode model has been implemented in a commercial circuit simulator and validated with a good agreement by measurement results
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