Hybrid crossbar architecture for a memristor based memory

C. Yakopcic, T. Taha, Raqibul Hasan
{"title":"Hybrid crossbar architecture for a memristor based memory","authors":"C. Yakopcic, T. Taha, Raqibul Hasan","doi":"10.1109/NAECON.2014.7045809","DOIUrl":null,"url":null,"abstract":"This paper describes a new memristor crossbar architecture that is proposed for use in a high density cache design. This design has less than 10% of the write energy consumption than a simple memristor crossbar. Also, it has up to 4 times the bit density of an STT-MRAM system and up to 11 times the bit density of an SRAM architecture. The proposed architecture is analyzed using a detailed SPICE analysis that accounts for the resistance of the wires in the memristor structure. Additionally, the memristor model used in this work has been matched to specific device characterization data to provide accurate results in terms of energy, area, and timing.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAECON.2014.7045809","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28

Abstract

This paper describes a new memristor crossbar architecture that is proposed for use in a high density cache design. This design has less than 10% of the write energy consumption than a simple memristor crossbar. Also, it has up to 4 times the bit density of an STT-MRAM system and up to 11 times the bit density of an SRAM architecture. The proposed architecture is analyzed using a detailed SPICE analysis that accounts for the resistance of the wires in the memristor structure. Additionally, the memristor model used in this work has been matched to specific device characterization data to provide accurate results in terms of energy, area, and timing.
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一种基于忆阻器的存储器混合横条结构
本文提出了一种用于高密度高速缓存设计的新型忆阻器横栅结构。这种设计比一个简单的忆阻交叉栅的写入能耗少10%。此外,它的比特密度是STT-MRAM系统的4倍,是SRAM体系结构的11倍。使用详细的SPICE分析来分析所提出的架构,该分析考虑了忆阻器结构中导线的电阻。此外,在这项工作中使用的忆阻器模型已经与特定的器件特性数据相匹配,从而在能量、面积和时间方面提供准确的结果。
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