{"title":"A MESFET capacitance model for low-drain voltage operation","authors":"Y. Lan, C. Wei, J.C.M. Hwang","doi":"10.1109/SARNOF.1995.636684","DOIUrl":null,"url":null,"abstract":"A new capacitance model for GaAs MESFETs suitable for bwdrain voltage operation is presented. The model includes, in addition to gate-bias dependence, drain-bias dependence of gate-source and gate-drain capacitances. The modeled capacitance values compare well with that extracted from measured S-parameters. The model bas been incorporated in a harmonic-balance commercial simulator, and the simulated MESFET power performance is in good agreement with measured data.","PeriodicalId":118150,"journal":{"name":"IEEE Princeton Section Sarnoff Symposium","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Princeton Section Sarnoff Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SARNOF.1995.636684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
A new capacitance model for GaAs MESFETs suitable for bwdrain voltage operation is presented. The model includes, in addition to gate-bias dependence, drain-bias dependence of gate-source and gate-drain capacitances. The modeled capacitance values compare well with that extracted from measured S-parameters. The model bas been incorporated in a harmonic-balance commercial simulator, and the simulated MESFET power performance is in good agreement with measured data.
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