Circuit design technique for high efficiency Class F amplifiers

A. Grebennikov
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引用次数: 84

Abstract

In this paper, lead network circuit technique to design high efficiency Class F amplifiers using new types of loading circuits was demonstrated. The loading circuits were realized using both lumped elements and transmission lines. The derived values of each circuit element are given. The simulation procedure and experimental verification were performed on the example of high-voltage LDMOSFET power amplifier. The test measurements show that, for this power amplifier, 76% drain efficiency can be achieved for 20 W output power at 500 MHz operating frequency.
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高效F类放大器的电路设计技术
本文介绍了采用新型负载电路设计高效F类放大器的引线网络电路技术。负载电路采用集总元件和传输线两种方式实现。给出了各电路元件的推导值。以高压LDMOSFET功率放大器为例进行了仿真和实验验证。测试结果表明,该功率放大器在500mhz工作频率下,输出功率为20w,漏极效率可达76%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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