{"title":"A high efficient and compact charge pump with multi-pillar vertical MOSFET","authors":"H. Na, T. Endoh","doi":"10.1109/VLSI-TSA.2012.6210118","DOIUrl":null,"url":null,"abstract":"A new charge pump with the multi-pillar VMOS has been proposed and its performances for different ratio of the pillar diameter and the pillar space in the multi-pillar have been evaluated. As the results, it is clarified that the proposed charge pump realizes the best performances when the ratio is 1. The proposed charge pump realizes a 24% increased output current with 2.88% improved efficiency and a 0.7V higher VPP with 19% shorter VPP generation time than the conventional charge pump with the single-pillar VMOS.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A new charge pump with the multi-pillar VMOS has been proposed and its performances for different ratio of the pillar diameter and the pillar space in the multi-pillar have been evaluated. As the results, it is clarified that the proposed charge pump realizes the best performances when the ratio is 1. The proposed charge pump realizes a 24% increased output current with 2.88% improved efficiency and a 0.7V higher VPP with 19% shorter VPP generation time than the conventional charge pump with the single-pillar VMOS.