Coupled quantum dots on SOI as highly integrated Si qubits

Abstract

Quantum computing is no longer a future technology. Recent advances in D-Wave computers based on quantum annealing and superconducting devices, and the demonstration of long spin decoherence times in isotopically-enriched Si qubits, have accelerated the research and development of this technology. The remaining challenge is large scale integration of qubits. Physically-defined coupled quantum dots (QDs) on silicon-on-insulator substrates represent potential multiple scaled qubits. This work demonstrated the fabrication of coupled QDs with control gates and charge sensor single-electron transistors, the observation of Pauli spin blockade and the control of a few electron regimes, as well as triple QDs and p-channel operation.