Parameterized Design and Formal Verification of Multi-ported Memory

Mufan Xiang, Yongjian Li, Sijun Tan, Yongxin Zhao, Yiwei Chi
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引用次数: 1

Abstract

Multi-ported memories are essential modules to provide parallel access for high-performance parallel computation systems such as VLIW and vector processors, etc. However, the design of multi-ported memories are rather complex and error-prone, which usually causes the high implementation cost. Therefore, the designs and verification of multi-ported memories become challenging. In this paper, we firstly present a modular and parameterized approach based on Chisel to design and implement multi-ported memory concisely. Furthermore, to verify the correctness of the design, we formalize properties of multi-write-read operations of the memories by generalized symbolic trajectory assertion (GSTE) graphs and verified them by two kinds of approaches: SystemVerilog Assertions-based, and GSTE-based approaches. Our verification through SVA and STE/GSTE successfully finds an error caused by misusing one parameter in our high-level design.
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多端口存储器的参数化设计与形式化验证
多端口存储器是为高性能并行计算系统(如VLIW和矢量处理器等)提供并行访问的基本模块。然而,多端口存储器的设计相当复杂且容易出错,这通常导致较高的实现成本。因此,多端口存储器的设计和验证变得具有挑战性。本文首先提出了一种基于Chisel的模块化和参数化方法来简洁地设计和实现多端口存储器。此外,为了验证设计的正确性,我们用广义符号轨迹断言(GSTE)图形式化了存储器的多次写读操作的性质,并通过两种方法进行了验证:基于SystemVerilog断言的方法和基于GSTE的方法。通过SVA和STE/GSTE的验证,我们成功地发现了高层次设计中一个参数使用不当导致的错误。
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