Investigation of double peak voltage in pulse quenching effect on the single-event transient

Luo Sheng, He Wei, Zhang Zhun, He Lingxian, C. Jianmin, Wu Qingyang
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引用次数: 2

Abstract

Pulse quenching is evaluate at device-level. Simulation results present that unsynchronized flipping time of adjacent pMOS causing by overmuch distance of adjacent pMOS leads to double peak voltage.
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双峰电压脉冲淬火对单事件暂态影响的研究
脉冲淬火在设备级进行评估。仿真结果表明,相邻pMOS距离过长导致相邻pMOS翻转时间不同步,导致电压出现双峰。
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