{"title":"Non-isothermal characteristics of SiC power Schottky diodes","authors":"J. Zarebski, J. Dąbrowski","doi":"10.1109/SPEEDHAM.2008.4581136","DOIUrl":null,"url":null,"abstract":"In the paper the problem of modelling DC characteristics of SiC power Schottky diodes with thermal effects taken into account is considered. The electrothermal model of the investigated devices was formulated for SPICE and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of a selected SiC power Schottky diode.","PeriodicalId":345557,"journal":{"name":"2008 International Symposium on Power Electronics, Electrical Drives, Automation and Motion","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Symposium on Power Electronics, Electrical Drives, Automation and Motion","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPEEDHAM.2008.4581136","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
In the paper the problem of modelling DC characteristics of SiC power Schottky diodes with thermal effects taken into account is considered. The electrothermal model of the investigated devices was formulated for SPICE and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of a selected SiC power Schottky diode.