B. Tsai, S. J. Chang, C. S.Ho, K. Chou, I. Wei, P. Tseng
{"title":"The OTP Data Retention Improvement on CESL and SAB Film Scheme","authors":"B. Tsai, S. J. Chang, C. S.Ho, K. Chou, I. Wei, P. Tseng","doi":"10.1109/IPFA.2018.8452494","DOIUrl":null,"url":null,"abstract":"The effects of silicide-blocked (SAB) oxide and contact etch stop layer (CESL) on the retention characteristic of one-time programming (OTP) nonvolatile memory (NVM) are experimentally evaluated through various deposition process conditions. The OTP retention is characterized after a baking condition of 250°C for 4 hrs. Our results suggest the NH3 and SiH4gas base deposition process effectively make improvements on OTP data retention. And the thicker the SAB film, the better the data retention.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452494","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The effects of silicide-blocked (SAB) oxide and contact etch stop layer (CESL) on the retention characteristic of one-time programming (OTP) nonvolatile memory (NVM) are experimentally evaluated through various deposition process conditions. The OTP retention is characterized after a baking condition of 250°C for 4 hrs. Our results suggest the NH3 and SiH4gas base deposition process effectively make improvements on OTP data retention. And the thicker the SAB film, the better the data retention.
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