S. Selvaraja, E. Rosseel, L. Fernández, M. Tabat, W. Bogaerts, J. Hautala, P. Absil
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引用次数: 19
Abstract
We present our recent results on Si thickness uniformity improvement in a SOI wafer. We improved the thickness uniformity by 50%. The effect of the correction process on the propagation loss and device uniformity is also presented.
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