Pub Date : 2012-03-15DOI: 10.1109/LPT.2011.2181496
S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, D. Miller
We present a Ge/SiGe quantum well QCSE waveguide modulator that is monolithically integrated with SOI waveguides. The integrated device shows 3.2 dB contrast ratio with 1 V swing at 7.0 Gbps.
{"title":"A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides","authors":"S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, D. Miller","doi":"10.1109/LPT.2011.2181496","DOIUrl":"https://doi.org/10.1109/LPT.2011.2181496","url":null,"abstract":"We present a Ge/SiGe quantum well QCSE waveguide modulator that is monolithically integrated with SOI waveguides. The integrated device shows 3.2 dB contrast ratio with 1 V swing at 7.0 Gbps.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124798838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/GROUP4.2011.6053741
T. Masaud, E. Jaberansary, D. Bagnall, H. M. H. Chong
We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20µm have been achieved.
{"title":"Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure","authors":"T. Masaud, E. Jaberansary, D. Bagnall, H. M. H. Chong","doi":"10.1109/GROUP4.2011.6053741","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053741","url":null,"abstract":"We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20µm have been achieved.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114978604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/GROUP4.2011.6053728
K. Debnath, L. O’Faolain, T. Krauss
We use the slow light effect to enhance modulation in a carrier injection Mach Zehnder interferometer and enhance the modulation efficiency by a factor of 8 relative to a rib waveguide device.
我们利用慢光效应增强了载流子注入马赫曾德尔干涉仪的调制，相对于肋波导器件，调制效率提高了8倍。
{"title":"Slowlight enhanced photonic crystal modulators","authors":"K. Debnath, L. O’Faolain, T. Krauss","doi":"10.1109/GROUP4.2011.6053728","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053728","url":null,"abstract":"We use the slow light effect to enhance modulation in a carrier injection Mach Zehnder interferometer and enhance the modulation efficiency by a factor of 8 relative to a rib waveguide device.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128967039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/GROUP4.2011.6053708
Qianfan Xu, R. Soref
The paper presents a new optical directed logic architecture that is based on a regular array of integrated optical switches. The same circuit can be reconfigured to perform different combinational logic functions. Its application in network routing is discussed.
{"title":"Reconfigurable electro-optical logic in silicon photonic integrated circuits","authors":"Qianfan Xu, R. Soref","doi":"10.1109/GROUP4.2011.6053708","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053708","url":null,"abstract":"The paper presents a new optical directed logic architecture that is based on a regular array of integrated optical switches. The same circuit can be reconfigured to perform different combinational logic functions. Its application in network routing is discussed.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129073208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/GROUP4.2011.6053759
R. Camacho-Aguilera, J. Bessette, Yan Cai, L. Kimerling, J. Michel
Edge-emission electroluminescence from waveguide Ge-on-Si pnn heterojunction diode structures is demonstrated. Selective growth of highly phosphorus doped Ge in oxide trenches shows promise as a design for electrically pumped laser on Si.
{"title":"Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers","authors":"R. Camacho-Aguilera, J. Bessette, Yan Cai, L. Kimerling, J. Michel","doi":"10.1109/GROUP4.2011.6053759","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053759","url":null,"abstract":"Edge-emission electroluminescence from waveguide Ge-on-Si pnn heterojunction diode structures is demonstrated. Selective growth of highly phosphorus doped Ge in oxide trenches shows promise as a design for electrically pumped laser on Si.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121381113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/GROUP4.2011.6053768
K. Tani, S. Saito, K. Oda, M. Miura, T. Mine, T. Sugawara, T. Ido
Ge quantum wells perpendicular to a substrate, called Ge fins, have been fabricated by selectively oxidizing Si in SiGe grown epitaxially on an atomically flat Si(111) surface. The three-dimensional structure of the fins is suitable for relaxing the compressive strain induced by the lattice constant mismatch between the Si and Ge. The current voltage characteristics of Ge diodes show low dark currents, confirming the high crystalline quality of the Ge fins. By injecting forward currents into the Ge fins, we found direct recombinations at the Γ valley.
{"title":"Ge(111)-fin light-emitting diodes","authors":"K. Tani, S. Saito, K. Oda, M. Miura, T. Mine, T. Sugawara, T. Ido","doi":"10.1109/GROUP4.2011.6053768","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053768","url":null,"abstract":"Ge quantum wells perpendicular to a substrate, called Ge fins, have been fabricated by selectively oxidizing Si in SiGe grown epitaxially on an atomically flat Si(111) surface. The three-dimensional structure of the fins is suitable for relaxing the compressive strain induced by the lattice constant mismatch between the Si and Ge. The current voltage characteristics of Ge diodes show low dark currents, confirming the high crystalline quality of the Ge fins. By injecting forward currents into the Ge fins, we found direct recombinations at the Γ valley.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126444934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/GROUP4.2011.6053804
R. Kou, K. Yamada, H. Nishi, T. Tsuchizawa, Toshifumi Watanabe, H. Shinojima, S. Itabashi
We describe a 10-Gbps differential phase-shift keying demodulation with huge birefringence in a silicon channel waveguide. Compared with conventional free-space optics, a planar lightwave circuit and other structures based delay interferometers, the size of device can be significantly reduced.
{"title":"DPSK demodulation with a single silicon photonic nanowire waveguide","authors":"R. Kou, K. Yamada, H. Nishi, T. Tsuchizawa, Toshifumi Watanabe, H. Shinojima, S. Itabashi","doi":"10.1109/GROUP4.2011.6053804","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053804","url":null,"abstract":"We describe a 10-Gbps differential phase-shift keying demodulation with huge birefringence in a silicon channel waveguide. Compared with conventional free-space optics, a planar lightwave circuit and other structures based delay interferometers, the size of device can be significantly reduced.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130691870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/GROUP4.2011.6053822
J. V. Galán, T. Tekin, G. B. Preve, A. Brimont, M. Llopis, P. Sanchis
A package solution for silicon photonic integrated circuits with multiple input/output grating-based optical interfaces is proposed and experimentally demonstrated. The approach is based on using a subassembly sub-mount carrier to maintain standard-compatible lateral orientation for the fibers in the package.
{"title":"Low profile silicon photonics packaging approach featuring configurable multiple electrical and optical connectivity","authors":"J. V. Galán, T. Tekin, G. B. Preve, A. Brimont, M. Llopis, P. Sanchis","doi":"10.1109/GROUP4.2011.6053822","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053822","url":null,"abstract":"A package solution for silicon photonic integrated circuits with multiple input/output grating-based optical interfaces is proposed and experimentally demonstrated. The approach is based on using a subassembly sub-mount carrier to maintain standard-compatible lateral orientation for the fibers in the package.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124539660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/GROUP4.2011.6053716
B. Desiatov, I. Goykhman, U. Levy
We investigate numerically and experimentally the on-chip nanoscale focusing of surface plasmon polaritons (SPPs) in metallic nanotip coupled to the silicon waveguide. Strong field enhancement is observed at the apex of the tip.
{"title":"Plasmonic nanotips for on-chip focusing of light","authors":"B. Desiatov, I. Goykhman, U. Levy","doi":"10.1109/GROUP4.2011.6053716","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053716","url":null,"abstract":"We investigate numerically and experimentally the on-chip nanoscale focusing of surface plasmon polaritons (SPPs) in metallic nanotip coupled to the silicon waveguide. Strong field enhancement is observed at the apex of the tip.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123971250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/GROUP4.2011.6053787
X. Ma, F. Xu, J. Benavides, S. Cloutier
We report an all solution-based method producing hybrid heterostructures with efficient light-emission in the near-infrared. This robust, low-cost and versatile architecture is especially useful for flexible or reconfigurable optoelectronics, energy harvesting and biosensing chip-integrated platforms.
{"title":"Hybrid polymer-nanocrystal heterostructures for high-performance chip-integrated near-infrared LEDs","authors":"X. Ma, F. Xu, J. Benavides, S. Cloutier","doi":"10.1109/GROUP4.2011.6053787","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053787","url":null,"abstract":"We report an all solution-based method producing hybrid heterostructures with efficient light-emission in the near-infrared. This robust, low-cost and versatile architecture is especially useful for flexible or reconfigurable optoelectronics, energy harvesting and biosensing chip-integrated platforms.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124497266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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