A highly-linear highly efficient HBT for communications circuits

R.S. Brozovich, D. Helms, L.W. Yang, J. Komiak
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引用次数: 8

Abstract

A Martin Marietta Laboratory heterojunction bipolar transistor, which was fabricated using a base-emitter realigned process to reduce surface recombination, has been load pulled to demonstrate that it is simultaneously highly linear and efficient. Achieving a breakthrough in highly linear C-band communications power amplification, the HBT demonstrated a linearity of 30 dB C/I, typically required by communications systems, with 61% power added efficiency at 6 GHz. When tuned for maximum efficiency it achieved 72% P.A.E.
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一种用于通信电路的高线性高效HBT
Martin Marietta实验室的一种异质结双极晶体管,采用基极-发射极重新排列工艺来减少表面复合,已被负载拉出,以证明它同时具有高度线性和高效率。在高线性C波段通信功率放大方面取得了突破,HBT展示了30 dB C/I的线性度,这是通信系统通常需要的,在6 GHz时功率增加效率为61%。当调整到最高效率时,它达到了72%的P.A.E.
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A novel W-band monolithic push-pull power amplifier Monolithic HEMT-HBT integration for novel microwave circuit applications A 40 GHz D-type flip-flop using AlGaAs/GaAs HBTs High-speed AlGaAs/GaAs HBTs and their applications to 40-Gbit/s-class ICs 10 Gb/s monolithic optical modulator driver with high output voltage of 5 V using InGaP/GaAs HBTs
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