Tzu-Hsuan Hsu, Jau‐Ji Jou, Tien-Tsorng Shih, Y. Hung
{"title":"Monolithic Integration of Photo-Diode and Transimpedance Amplifier in CMOS 90 nm Technology","authors":"Tzu-Hsuan Hsu, Jau‐Ji Jou, Tien-Tsorng Shih, Y. Hung","doi":"10.1109/ICASI57738.2023.10179578","DOIUrl":null,"url":null,"abstract":"Herein, we designed and simulated the monolithic integration of photo-diode (PD) and transimpedance amplifier (TIA) in CMOS 90 nm technology. In the standard process, a PN-junction structure with an illuminated area of 39.48 $\\mu$m × 39.48 $\\mu$m was designed as the PD. The breakdown voltage of the PD is -10.5V. At a reverse bias voltage of 3V, the PD has a dark current of 2.6 pA and a capacitance of 1.03 pF. The TIA is composed of a regulated gate cascode circuit, a differential amplifier paralleling with an edge peak generator. The PD and the TIA are monolithically integrated, the overall transimpedance gain is 40.3 dB$\\Omega$, and the bandwidth is 4.1 GHz. The integrated design of PD and TIA could be applied in 5 Gb/s optical receivers.","PeriodicalId":281254,"journal":{"name":"2023 9th International Conference on Applied System Innovation (ICASI)","volume":"189 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 9th International Conference on Applied System Innovation (ICASI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASI57738.2023.10179578","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Herein, we designed and simulated the monolithic integration of photo-diode (PD) and transimpedance amplifier (TIA) in CMOS 90 nm technology. In the standard process, a PN-junction structure with an illuminated area of 39.48 $\mu$m × 39.48 $\mu$m was designed as the PD. The breakdown voltage of the PD is -10.5V. At a reverse bias voltage of 3V, the PD has a dark current of 2.6 pA and a capacitance of 1.03 pF. The TIA is composed of a regulated gate cascode circuit, a differential amplifier paralleling with an edge peak generator. The PD and the TIA are monolithically integrated, the overall transimpedance gain is 40.3 dB$\Omega$, and the bandwidth is 4.1 GHz. The integrated design of PD and TIA could be applied in 5 Gb/s optical receivers.
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