GaN HEMT large-signal model research

Abstract

This paper gives an AlGaN/GaN HEMT large-signal model for large-scaled device. It's the first time to add sub-threshold current based on [1], and introduces self-heating effect under high Vds large Ids in the device. AlGaN/GaN HEMT semi-empirical DC model is optimized. I-V curves are fitted well. An AlGaN/GaN HEMT large-signal model is developed. A comparison of simulation results with experiments data is made, and good agreements of (output power) and Gain at the bias of Vgs = -2V, Vds = -25V have been obtained at operational frequency of 5.4 GHz. Accurate model is offered for GaN HEMTs MIC and MMIC design, and it enhanced the practicability of GaN HEMTs' large-signal model.