{"title":"The Design of Single Chip Memory Management Unit/Data Cache","authors":"A. K. Goksel, R. Krambeck, P. Thomas, M. Tsay","doi":"10.1109/ESSCIRC.1988.5468474","DOIUrl":null,"url":null,"abstract":"CAM-based translation mechanism and a large instruction data cache onto a single chip (Figure 1). Thib architecture combines high performance memory management with systemlevel caching to eliminate address translation overhead, and achieves the high hit rate and functionality of a physical-based cache. Fully automatic and feature-rich memory management support, and upward protocol and O S compatibility, are provided. The chip, fabricated using AT&T's lum Twin Tub CMOS, l contains approx. 400,000 transistors and is housed in a 133 pin pin-grid-array package. Power dissipation is about 1 watt at the operating frequency of 21 MHz. The silicon is currently fully operational at 24MHz and is available in preproduction quantities.","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1988.5468474","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
CAM-based translation mechanism and a large instruction data cache onto a single chip (Figure 1). Thib architecture combines high performance memory management with systemlevel caching to eliminate address translation overhead, and achieves the high hit rate and functionality of a physical-based cache. Fully automatic and feature-rich memory management support, and upward protocol and O S compatibility, are provided. The chip, fabricated using AT&T's lum Twin Tub CMOS, l contains approx. 400,000 transistors and is housed in a 133 pin pin-grid-array package. Power dissipation is about 1 watt at the operating frequency of 21 MHz. The silicon is currently fully operational at 24MHz and is available in preproduction quantities.
基于cam的转换机制和单个芯片上的大型指令数据缓存(图1)。Thib架构将高性能内存管理与系统级缓存相结合,以消除地址转换开销,并实现基于物理缓存的高命中率和功能。提供了全自动和功能丰富的内存管理支持,以及向上协议和O S兼容性。该芯片采用美国电话电报公司(AT&T)的lum Twin Tub CMOS制造,包含大约1个芯片。40万个晶体管,并被安置在133引脚的引脚网格阵列封装中。工作频率为21mhz时,功耗约为1w。该芯片目前在24MHz的频率下完全可运行,并可进行预生产。