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ESSCIRC '88: Fourteenth European Solid-State Circuits Conference最新文献

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The Design of Single Chip Memory Management Unit/Data Cache 单片机存储管理单元/数据缓存的设计
Pub Date : 1988-09-01 DOI: 10.1109/ESSCIRC.1988.5468474
A. K. Goksel, R. Krambeck, P. Thomas, M. Tsay
CAM-based translation mechanism and a large instruction data cache onto a single chip (Figure 1). Thib architecture combines high performance memory management with systemlevel caching to eliminate address translation overhead, and achieves the high hit rate and functionality of a physical-based cache. Fully automatic and feature-rich memory management support, and upward protocol and O S compatibility, are provided. The chip, fabricated using AT&T's lum Twin Tub CMOS, l contains approx. 400,000 transistors and is housed in a 133 pin pin-grid-array package. Power dissipation is about 1 watt at the operating frequency of 21 MHz. The silicon is currently fully operational at 24MHz and is available in preproduction quantities.
基于cam的转换机制和单个芯片上的大型指令数据缓存(图1)。Thib架构将高性能内存管理与系统级缓存相结合,以消除地址转换开销,并实现基于物理缓存的高命中率和功能。提供了全自动和功能丰富的内存管理支持,以及向上协议和O S兼容性。该芯片采用美国电话电报公司(AT&T)的lum Twin Tub CMOS制造,包含大约1个芯片。40万个晶体管,并被安置在133引脚的引脚网格阵列封装中。工作频率为21mhz时,功耗约为1w。该芯片目前在24MHz的频率下完全可运行,并可进行预生产。
{"title":"The Design of Single Chip Memory Management Unit/Data Cache","authors":"A. K. Goksel, R. Krambeck, P. Thomas, M. Tsay","doi":"10.1109/ESSCIRC.1988.5468474","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1988.5468474","url":null,"abstract":"CAM-based translation mechanism and a large instruction data cache onto a single chip (Figure 1). Thib architecture combines high performance memory management with systemlevel caching to eliminate address translation overhead, and achieves the high hit rate and functionality of a physical-based cache. Fully automatic and feature-rich memory management support, and upward protocol and O S compatibility, are provided. The chip, fabricated using AT&T's lum Twin Tub CMOS, l contains approx. 400,000 transistors and is housed in a 133 pin pin-grid-array package. Power dissipation is about 1 watt at the operating frequency of 21 MHz. The silicon is currently fully operational at 24MHz and is available in preproduction quantities.","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115622238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Monolithic Bipolar 16 × 16 (+16) Crosspoint Matrix with Optimized Power Consumption 具有优化功耗的单片双极16 × 16(+16)交叉点矩阵
Pub Date : 1988-09-01 DOI: 10.1109/ESSCIRC.1988.5468317
J. Burkhart, J. Schomers
A bipolar 16×16(+16) crosspoint matrix for 140 Mbit/s communication systems is described. Low power consumption of less than 0.9 watt has been achieved by careful optimization of the signal network. The crosspoint matrix is capable of performing asynchronous, i.e. transparent switching of digital signals up to greater than 280 Mbit/s without an additional clock supply.
描述了用于140 Mbit/s通信系统的双极16×16(+16)交点矩阵。通过对信号网络的精心优化,实现了低于0.9瓦的低功耗。交叉点矩阵能够执行异步,即数字信号的透明切换,最高可达280mbit /s,而无需额外的时钟供应。
{"title":"A Monolithic Bipolar 16 × 16 (+16) Crosspoint Matrix with Optimized Power Consumption","authors":"J. Burkhart, J. Schomers","doi":"10.1109/ESSCIRC.1988.5468317","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1988.5468317","url":null,"abstract":"A bipolar 16×16(+16) crosspoint matrix for 140 Mbit/s communication systems is described. Low power consumption of less than 0.9 watt has been achieved by careful optimization of the signal network. The crosspoint matrix is capable of performing asynchronous, i.e. transparent switching of digital signals up to greater than 280 Mbit/s without an additional clock supply.","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115654256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Very High Slew-Rate Dynamic CMOS Operational Amplifier 一种非常高回转速率动态CMOS运算放大器
Pub Date : 1988-09-01 DOI: 10.1109/ESSCIRC.1988.5468347
R. Klinke, B. Hosticka, H. Pfleiderer
We present a dynamic CMOS operational amplifier with a special input circuit which injects an extra bias current to increase the slew-rate, depending on the input signal. The performance of this operational amplifier is compared to a conventional operational amplifier when used in a sample&hold circuit. The maximum operating clock frequency of the sample&hold circuit increases from 290 kHz up to 1 MHz with a hold-capacitor of 1 nF. The amplifier has been fabricated in a 5 ¿m CMOS process and dissipates a static power of 7.5 mW.
我们提出了一种动态CMOS运算放大器,它具有一个特殊的输入电路,该电路根据输入信号注入额外的偏置电流以增加旋转速率。在采样保持电路中,将该运算放大器的性能与传统运算放大器进行了比较。采样保持电路的最大工作时钟频率从290 kHz增加到1 MHz,保持电容为1 nF。该放大器采用5 μ m CMOS工艺制造,其静态功耗为7.5 mW。
{"title":"A Very High Slew-Rate Dynamic CMOS Operational Amplifier","authors":"R. Klinke, B. Hosticka, H. Pfleiderer","doi":"10.1109/ESSCIRC.1988.5468347","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1988.5468347","url":null,"abstract":"We present a dynamic CMOS operational amplifier with a special input circuit which injects an extra bias current to increase the slew-rate, depending on the input signal. The performance of this operational amplifier is compared to a conventional operational amplifier when used in a sample&hold circuit. The maximum operating clock frequency of the sample&hold circuit increases from 290 kHz up to 1 MHz with a hold-capacitor of 1 nF. The amplifier has been fabricated in a 5 ¿m CMOS process and dissipates a static power of 7.5 mW.","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124865744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
The Design and Production of Microwave Switch and Amplifier Modules Employing GaAs MMICs 基于砷化镓微芯片的微波开关与放大模块的设计与制作
Pub Date : 1988-09-01 DOI: 10.1109/ESSCIRC.1988.5468372
R. Pengelly, A. Ezzeddine, B. Maoz
GaAs MMIC technology and circuit design has matured over the last few years to a point where a number of products are now available commercially. Until recently these products have been single bare die or packaged single devices. Subsystem research and development centers have been building multi-chip modules for some time (ref. 1 & 2 for example), but there have been very few examples of such items being commercially available. This paper describes the design of a number of GaAs MMICs and the assembly of these parts into multi-chip modules built specifically as cost-effective products. Specific examples of driven multi-throw switches for EW, communications and test equipment applications are given together with details of amplifier modules containing voltage regulation and temperature compensation.
在过去的几年中,GaAs MMIC技术和电路设计已经成熟,许多产品现在已经商业化。直到最近,这些产品都是单裸模或封装的单器件。子系统研究和开发中心已经构建多芯片模块有一段时间了(例如参考文献1和2),但是这种项目在商业上可用的例子很少。本文描述了一些GaAs mmic的设计,以及将这些部件组装成多芯片模块的方法,这些模块是专门为具有成本效益的产品而构建的。给出了用于电子战、通信和测试设备应用的驱动多投开关的具体示例,以及包含电压调节和温度补偿的放大器模块的详细信息。
{"title":"The Design and Production of Microwave Switch and Amplifier Modules Employing GaAs MMICs","authors":"R. Pengelly, A. Ezzeddine, B. Maoz","doi":"10.1109/ESSCIRC.1988.5468372","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1988.5468372","url":null,"abstract":"GaAs MMIC technology and circuit design has matured over the last few years to a point where a number of products are now available commercially. Until recently these products have been single bare die or packaged single devices. Subsystem research and development centers have been building multi-chip modules for some time (ref. 1 & 2 for example), but there have been very few examples of such items being commercially available. This paper describes the design of a number of GaAs MMICs and the assembly of these parts into multi-chip modules built specifically as cost-effective products. Specific examples of driven multi-throw switches for EW, communications and test equipment applications are given together with details of amplifier modules containing voltage regulation and temperature compensation.","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116864318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Present Status and Future Trends in Analog Design Automation 模拟设计自动化的现状与未来趋势
Pub Date : 1988-09-01 DOI: 10.1109/ESSCIRC.1988.5468281
M. Degrauwe
{"title":"Present Status and Future Trends in Analog Design Automation","authors":"M. Degrauwe","doi":"10.1109/ESSCIRC.1988.5468281","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1988.5468281","url":null,"abstract":"","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128243073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel RISC Architecture for High-Speed Floating-Point Signal Processing 高速浮点信号处理的新型RISC架构
Pub Date : 1988-09-01 DOI: 10.1109/ESSCIRC.1988.5468418
B. Yernaux, P. Jespers
This paper describes the Floating-point digital Signal Processor of UCL, the FSPU, which is a single chip 22-bit signal and speech processor. The FSPU has been conceived according to a RISC philosophy and is based on a novel Processing Unit that achieves very high computation throughputs, while taking the greatest advantage of the wide dynamic range and precision features of the floating-point arithmetic. The developed architecture is intended to go beyond the limits of the standard general-purpose DSP implementations and to make the floating-point arithmetic more attractive on speed level. A 3 ¿m CMOS prototype has been realized.
本文介绍了UCL的浮点数字信号处理器FSPU,它是一种单片22位信号和语音处理器。FSPU是根据RISC理念设计的,它基于一种新颖的处理单元,可以实现非常高的计算吞吐量,同时最大限度地利用浮点运算的宽动态范围和精度特征。所开发的体系结构旨在超越标准通用DSP实现的限制,使浮点运算在速度层面上更具吸引力。实现了一个3¿m的CMOS原型。
{"title":"A Novel RISC Architecture for High-Speed Floating-Point Signal Processing","authors":"B. Yernaux, P. Jespers","doi":"10.1109/ESSCIRC.1988.5468418","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1988.5468418","url":null,"abstract":"This paper describes the Floating-point digital Signal Processor of UCL, the FSPU, which is a single chip 22-bit signal and speech processor. The FSPU has been conceived according to a RISC philosophy and is based on a novel Processing Unit that achieves very high computation throughputs, while taking the greatest advantage of the wide dynamic range and precision features of the floating-point arithmetic. The developed architecture is intended to go beyond the limits of the standard general-purpose DSP implementations and to make the floating-point arithmetic more attractive on speed level. A 3 ¿m CMOS prototype has been realized.","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126820129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Family of Microprocessors with Non Volatile Memory for Smart Card Applications 智能卡应用的非易失性存储器微处理器系列
Pub Date : 1988-09-01 DOI: 10.1109/ESSCIRC.1988.5468466
S. Fruhauf, L. Sourgen
This presentation report on a family of microprocessors with on board EPROM or EEPROM designed for smart card applications. Security devices, testing circuits and specific firmware have been included in this 1.5 micron CMOS module based design. An EPROM and an EEPROM chips are presented.
本报告介绍了为智能卡应用而设计的带有板载EPROM或EEPROM的微处理器系列。安全器件、测试电路和特定固件都包含在这个基于1.5微米CMOS模块的设计中。介绍了一种EPROM和EEPROM芯片。
{"title":"A Family of Microprocessors with Non Volatile Memory for Smart Card Applications","authors":"S. Fruhauf, L. Sourgen","doi":"10.1109/ESSCIRC.1988.5468466","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1988.5468466","url":null,"abstract":"This presentation report on a family of microprocessors with on board EPROM or EEPROM designed for smart card applications. Security devices, testing circuits and specific firmware have been included in this 1.5 micron CMOS module based design. An EPROM and an EEPROM chips are presented.","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121289281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Mixed-Mode A/D Converter with Self-Testing Capability 一种具有自测能力的混合模A/D转换器
Pub Date : 1988-09-01 DOI: 10.1109/ESSCIRC.1988.5468460
C. Leme, J. Franca, F. Maloberti, M. Piedade
This paper describes a 15-bit resolution self-calibrated A/D conversion system which can also realise the complementary D/A conversion. This makes it possible to implement a closed loop D/A + A/D conversion which can be used for performing a self-testing of the converter.
本文介绍了一种15位分辨率的自校准a /D转换系统,该系统还可以实现互补性的D/ a转换。这使得实现闭环D/ a + a /D转换成为可能,该转换可用于执行转换器的自测试。
{"title":"A Mixed-Mode A/D Converter with Self-Testing Capability","authors":"C. Leme, J. Franca, F. Maloberti, M. Piedade","doi":"10.1109/ESSCIRC.1988.5468460","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1988.5468460","url":null,"abstract":"This paper describes a 15-bit resolution self-calibrated A/D conversion system which can also realise the complementary D/A conversion. This makes it possible to implement a closed loop D/A + A/D conversion which can be used for performing a self-testing of the converter.","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126242828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Design Program for Comparators 比较器设计程序
Pub Date : 1988-09-01 DOI: 10.1109/ESSCIRC.1988.5468352
C. Meixenberger, M. Degrauwe
A design program for CMOS voltage comparators based on a library of fixed schematics has been realized. The program starts from simplified analytic expressions and uses a fast built-in transient simulator in an iteration loop to converge towards a correct solution. The program takes into account device mismatches, clock feedthrough and noise which are important limitative parameters for the comparator performances. Experimental results agree with the designed values and are compared with SPICE simulation results.
实现了基于固定原理图库的CMOS电压比较器设计程序。该程序从简化的解析表达式开始,在迭代循环中使用快速的内置瞬态模拟器来收敛到正确的解。该程序考虑了器件失配、时钟馈通和噪声这些重要的限制比较器性能的参数。实验结果与设计值吻合,并与SPICE仿真结果进行了比较。
{"title":"A Design Program for Comparators","authors":"C. Meixenberger, M. Degrauwe","doi":"10.1109/ESSCIRC.1988.5468352","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1988.5468352","url":null,"abstract":"A design program for CMOS voltage comparators based on a library of fixed schematics has been realized. The program starts from simplified analytic expressions and uses a fast built-in transient simulator in an iteration loop to converge towards a correct solution. The program takes into account device mismatches, clock feedthrough and noise which are important limitative parameters for the comparator performances. Experimental results agree with the designed values and are compared with SPICE simulation results.","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121966740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 750 ks/s 8-Bit Low-Power Pipelined A/D Converter 一个750ks /s的8位低功耗流水线A/D转换器
Pub Date : 1988-09-01 DOI: 10.1109/ESSCIRC.1988.5468461
V. Valencic, P. Deval
A switched-capacitor pipelined A/D convertor is described, in which the amplifier offset compensation is inherent to the circuit structure and the effect of clock-feedthrough is as low as 0.5 mV. Preliminary experimental results, obtained on circuits fabricated using a low-voltage CMOS technology, indicate 8- bit resolution for 750 kHz sampling frequency, with only 5 mW power consumption.
介绍了一种开关电容式流水线A/D转换器,其放大器偏置补偿是电路结构固有的,时钟馈通的影响低至0.5 mV。在使用低压CMOS技术制作的电路上获得的初步实验结果表明,在750 kHz采样频率下,8位分辨率仅为5 mW。
{"title":"A 750 ks/s 8-Bit Low-Power Pipelined A/D Converter","authors":"V. Valencic, P. Deval","doi":"10.1109/ESSCIRC.1988.5468461","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1988.5468461","url":null,"abstract":"A switched-capacitor pipelined A/D convertor is described, in which the amplifier offset compensation is inherent to the circuit structure and the effect of clock-feedthrough is as low as 0.5 mV. Preliminary experimental results, obtained on circuits fabricated using a low-voltage CMOS technology, indicate 8- bit resolution for 750 kHz sampling frequency, with only 5 mW power consumption.","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115886800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
期刊
ESSCIRC '88: Fourteenth European Solid-State Circuits Conference
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