S. Nakagawa, E. Hall, G. Almuneau, J.K. Kim, H. Kroemer, L. Coldren
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引用次数: 1
Abstract
We demonstrate the first room temperature, continuous-wave (CW) operation of a 1.55-/spl mu/m InGaAs vertical-cavity surface emitting laser (VCSEL) that is completely lattice-matched to InP and produced in one epitaxial growth. The structure employed intracavity contacts with an air-gap aperture. The threshold current and threshold current density were 6.2mA and 1.97kA/cm/sup 2/, respectively, at 200 C with a 20-/spl mu/m-diameter current aperture.
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