Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882334
J.K. Kim, E. Hall, S. Nakagawa, A. Huntington, L. Coldren
We present completely monolithic, single-step grown, bipolar cascade MQW vertical-cavity surface-emitting lasers (VCSELs) at 1.55 /spl mu/m with greater-than-unity differential quantum efficiency. A typical device had a threshold current density of 1 kA/cm/sup 2/, a threshold voltage of 3.2 V, and demonstrated continuous wave (CW) operation up to 8 C.
{"title":"Bipolar cascade 1.55 /spl mu/m VCSELs with >1 differential quantum efficiency and CW operation","authors":"J.K. Kim, E. Hall, S. Nakagawa, A. Huntington, L. Coldren","doi":"10.1109/ISLC.2000.882334","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882334","url":null,"abstract":"We present completely monolithic, single-step grown, bipolar cascade MQW vertical-cavity surface-emitting lasers (VCSELs) at 1.55 /spl mu/m with greater-than-unity differential quantum efficiency. A typical device had a threshold current density of 1 kA/cm/sup 2/, a threshold voltage of 3.2 V, and demonstrated continuous wave (CW) operation up to 8 C.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115473640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882332
S. Nakagawa, E. Hall, G. Almuneau, J.K. Kim, H. Kroemer, L. Coldren
We demonstrate the first room temperature, continuous-wave (CW) operation of a 1.55-/spl mu/m InGaAs vertical-cavity surface emitting laser (VCSEL) that is completely lattice-matched to InP and produced in one epitaxial growth. The structure employed intracavity contacts with an air-gap aperture. The threshold current and threshold current density were 6.2mA and 1.97kA/cm/sup 2/, respectively, at 200 C with a 20-/spl mu/m-diameter current aperture.
{"title":"1.55-/spl mu/m, InP-lattice-matched VCSELs operating at RT under CW","authors":"S. Nakagawa, E. Hall, G. Almuneau, J.K. Kim, H. Kroemer, L. Coldren","doi":"10.1109/ISLC.2000.882332","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882332","url":null,"abstract":"We demonstrate the first room temperature, continuous-wave (CW) operation of a 1.55-/spl mu/m InGaAs vertical-cavity surface emitting laser (VCSEL) that is completely lattice-matched to InP and produced in one epitaxial growth. The structure employed intracavity contacts with an air-gap aperture. The threshold current and threshold current density were 6.2mA and 1.97kA/cm/sup 2/, respectively, at 200 C with a 20-/spl mu/m-diameter current aperture.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115654026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882261
F. Devaux
In the optical fibre world, 3R regeneration (Reamplifying-Reshaping-Retiming) is performed electronically at the SDH level, mainly at the boundaries of transmission systems. In a competitive context, as the physical limits of fibre communication systems become difficult to overcome, in-line 3R regenerators are being considered to improve repeater spacing or system margins. Simultaneously optical routing and switching make their way in optical networks. In this context 3R regenerators are required to insure the expandability of the network. One objective of the ACTS REPEAT project was to ascertain the feasibility of all-optical 3R regeneration and its benefits.
{"title":"All-optical 3R regenerators: status and challenges","authors":"F. Devaux","doi":"10.1109/ISLC.2000.882261","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882261","url":null,"abstract":"In the optical fibre world, 3R regeneration (Reamplifying-Reshaping-Retiming) is performed electronically at the SDH level, mainly at the boundaries of transmission systems. In a competitive context, as the physical limits of fibre communication systems become difficult to overcome, in-line 3R regenerators are being considered to improve repeater spacing or system margins. Simultaneously optical routing and switching make their way in optical networks. In this context 3R regenerators are required to insure the expandability of the network. One objective of the ACTS REPEAT project was to ascertain the feasibility of all-optical 3R regeneration and its benefits.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114673674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882290
P. Eliseev, H. Li, G.T. Liu, A. Stintz, T. Newell, L. Lester, K. Malloy
Semiconductor lasers are grown on a GaAs substrate by MBE containing self-assembled InAs quantum dots (QDs) in an InGaAs quantum well, the so-called dot-in-a-well (DWELL) structure. The QDs are /spl sim/15 nm in diameter in the basal plane and /spl sim/7 nm in height. Several wafers are investigated in detail. The in-plane dot density is either 2.5x10/sup 10/ or 7.5x10/sup 10/ cm/sup -2/. The ground-state emission wavelength is 1230-1250 nm at room temperature, and the spectral FWHM is from 40 to 75 nm. We obtained and analyzed the dependence of the gain on current density in ultra-low-threshold laser diodes with DWELL quantum-dot structures.
{"title":"Gain in ultra-low-threshold InAs/InGaAs quantum dot lasers","authors":"P. Eliseev, H. Li, G.T. Liu, A. Stintz, T. Newell, L. Lester, K. Malloy","doi":"10.1109/ISLC.2000.882290","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882290","url":null,"abstract":"Semiconductor lasers are grown on a GaAs substrate by MBE containing self-assembled InAs quantum dots (QDs) in an InGaAs quantum well, the so-called dot-in-a-well (DWELL) structure. The QDs are /spl sim/15 nm in diameter in the basal plane and /spl sim/7 nm in height. Several wafers are investigated in detail. The in-plane dot density is either 2.5x10/sup 10/ or 7.5x10/sup 10/ cm/sup -2/. The ground-state emission wavelength is 1230-1250 nm at room temperature, and the spectral FWHM is from 40 to 75 nm. We obtained and analyzed the dependence of the gain on current density in ultra-low-threshold laser diodes with DWELL quantum-dot structures.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121333775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882272
R. Nagarajan, V. Rossin, H. Ransom, N. Morozova, A. Kanjamala, R. Parke, D. Dawson, T.J. Kim, H. Clarke, K. Uppal, D. Coblentz, J. Major
Highly efficient, 0.5 W, single-mode 980 nm pump modules for erbium-doped optical amplifiers have been developed. The laser diode has been optimized to eliminate the optical kink associated with spatial mode instability thereby allowing a significant increase of the chip power. The optimized chip has a lower series and thermal resistance resulting in a more efficient operation with high reliability. The chip has been incorporated into a newly developed, highly efficient module platform. This module utilizes the industry standard 14-pin 'butterfly' format, and has optimized fiber coupling and thermal design. The combination of an excellent chip and an optimized module design has lead to single mode coupled powers in excess of 0.5 W for telecommunication applications that require high reliability.
{"title":"Grating stabilized 0.5 W, 980 nm pump modules","authors":"R. Nagarajan, V. Rossin, H. Ransom, N. Morozova, A. Kanjamala, R. Parke, D. Dawson, T.J. Kim, H. Clarke, K. Uppal, D. Coblentz, J. Major","doi":"10.1109/ISLC.2000.882272","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882272","url":null,"abstract":"Highly efficient, 0.5 W, single-mode 980 nm pump modules for erbium-doped optical amplifiers have been developed. The laser diode has been optimized to eliminate the optical kink associated with spatial mode instability thereby allowing a significant increase of the chip power. The optimized chip has a lower series and thermal resistance resulting in a more efficient operation with high reliability. The chip has been incorporated into a newly developed, highly efficient module platform. This module utilizes the industry standard 14-pin 'butterfly' format, and has optimized fiber coupling and thermal design. The combination of an excellent chip and an optimized module design has lead to single mode coupled powers in excess of 0.5 W for telecommunication applications that require high reliability.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"60 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124804874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882291
M. Kisin, M. Stroscio, G. Belenky, S. Luryi
GaSb-based interband and intersubband type-II cascade lasers are promising for mid- and far-infrared applications. For intersubband lasing scheme an efficient electron extraction from the lowest lasing level is a necessary requirement to achieve the intersubband inverse population, and, hence, lower threshold and higher CW operating temperature. In type-I cascade structures, electron transition into adjacent quantum well, accompanied by LO-phonon emission, is the most effective depopulation mechanism, whereas for type-II design the interband tunneling process is the primary path for electron escape, especially in interband lasing scheme with lower lasing states located in the GaSb layer. In the work we study the interband tunneling depopulation in the intersubband InAs/GaSb/InAs (A/B/A) laser heterostructure.
{"title":"Interband tunneling in InAs/GaSb type-II cascade structure","authors":"M. Kisin, M. Stroscio, G. Belenky, S. Luryi","doi":"10.1109/ISLC.2000.882291","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882291","url":null,"abstract":"GaSb-based interband and intersubband type-II cascade lasers are promising for mid- and far-infrared applications. For intersubband lasing scheme an efficient electron extraction from the lowest lasing level is a necessary requirement to achieve the intersubband inverse population, and, hence, lower threshold and higher CW operating temperature. In type-I cascade structures, electron transition into adjacent quantum well, accompanied by LO-phonon emission, is the most effective depopulation mechanism, whereas for type-II design the interband tunneling process is the primary path for electron escape, especially in interband lasing scheme with lower lasing states located in the GaSb layer. In the work we study the interband tunneling depopulation in the intersubband InAs/GaSb/InAs (A/B/A) laser heterostructure.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117031555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882288
D. Zhou, L. Mawst
We demonstrate that 2D (4x4) VCSEL arrays can be designed to operate in a stable in-phase mode in good agreement with theory. Calculations show resonant couplings for the in-phase (out-of-phase) mode occurs when the inter-element spacing corresponds to an odd (even) integral number of half-waves of the antiguide. It consists of 27.5 pairs of AlAs-GaAs n-DBR, 23 pairs of AlGaAs-GaAs p-DBR and an optical cavity which includes 3-InGaAs quantum wells, GaAs barrier layers, and AlGaAs confinement layers for 980nm emission.
{"title":"2-D phased-locked antiguided vertical cavity surface emitting laser arrays","authors":"D. Zhou, L. Mawst","doi":"10.1109/ISLC.2000.882288","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882288","url":null,"abstract":"We demonstrate that 2D (4x4) VCSEL arrays can be designed to operate in a stable in-phase mode in good agreement with theory. Calculations show resonant couplings for the in-phase (out-of-phase) mode occurs when the inter-element spacing corresponds to an odd (even) integral number of half-waves of the antiguide. It consists of 27.5 pairs of AlAs-GaAs n-DBR, 23 pairs of AlGaAs-GaAs p-DBR and an optical cavity which includes 3-InGaAs quantum wells, GaAs barrier layers, and AlGaAs confinement layers for 980nm emission.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124180304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882278
F. Gerard, S. Delepine, H. Bissessur, D. Locatelli, T. Fillion, N. Bouché, P. Salet
We report the realization of a lossy filter utilizing ion implantation of the multiple-quantum-well (MQW) active layer along both sides of the ridge waveguide, and optimize the implantation process so as to enhance the diffraction-limited power level of our 1.48-μm unstable-cavity lasers. This enables at least 1.3 W of CW diffraction-limited power at 1.48 μm, which is the highest level ever reported for a structure without cavity-spoiling grooves.
{"title":"Single-transverse-mode filtering utilizing proton implantation: 1.3-W CW diffraction-limited unstable-cavity lasers at 1.48 /spl mu/m","authors":"F. Gerard, S. Delepine, H. Bissessur, D. Locatelli, T. Fillion, N. Bouché, P. Salet","doi":"10.1109/ISLC.2000.882278","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882278","url":null,"abstract":"We report the realization of a lossy filter utilizing ion implantation of the multiple-quantum-well (MQW) active layer along both sides of the ridge waveguide, and optimize the implantation process so as to enhance the diffraction-limited power level of our 1.48-μm unstable-cavity lasers. This enables at least 1.3 W of CW diffraction-limited power at 1.48 μm, which is the highest level ever reported for a structure without cavity-spoiling grooves.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116263669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882274
J. Hwang, H. Ryu, D. Song, I. Y. Han, H. Park, D. Jang, Y.H. Lee
We report the first continuous-wave (CW) operation of 2D slab photonic crystal laser at room temperature. This 2D photonic bandgap laser is built on a thin InGaAsP slab waveguide structure. 2D triangular photonic crystal mirrors are formed by drilling holes. The lattice constant is 450 nm and the radius of holes is 140 nm. To locate the active layer near an anti-node of the slab, a 100nm thick layer is added on top of the active material which consists of six compressively strained (0.6%) InGaAsP quantum wells.
{"title":"Room temperature continuous operation of optically-pumped two-dimensional photonic crystal slab laser","authors":"J. Hwang, H. Ryu, D. Song, I. Y. Han, H. Park, D. Jang, Y.H. Lee","doi":"10.1109/ISLC.2000.882274","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882274","url":null,"abstract":"We report the first continuous-wave (CW) operation of 2D slab photonic crystal laser at room temperature. This 2D photonic bandgap laser is built on a thin InGaAsP slab waveguide structure. 2D triangular photonic crystal mirrors are formed by drilling holes. The lattice constant is 450 nm and the radius of holes is 140 nm. To locate the active layer near an anti-node of the slab, a 100nm thick layer is added on top of the active material which consists of six compressively strained (0.6%) InGaAsP quantum wells.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"50 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126353464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882298
S. Rennon, L. Bach, J. Reithmaier, A. Forchel, J. Gentner, L. Goldstein
We have fabricated single mode lasers with lateral gratings by focused ion beam lithography. The transmission of the DFB mode through a passive unpumped waveguide section was studied as a function of the emission wavelength. The lateral grating was also investigated as a passive Bragg filter by pumping the unpatterned waveguide section. Ridge waveguides were fabricated on InGaAsP/InP laser structures with 8 compressively strained quantum wells.
{"title":"Monolithic integration of laterally complex coupled DFB lasers with passive waveguides by positive wavelength detuning","authors":"S. Rennon, L. Bach, J. Reithmaier, A. Forchel, J. Gentner, L. Goldstein","doi":"10.1109/ISLC.2000.882298","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882298","url":null,"abstract":"We have fabricated single mode lasers with lateral gratings by focused ion beam lithography. The transmission of the DFB mode through a passive unpumped waveguide section was studied as a function of the emission wavelength. The lateral grating was also investigated as a passive Bragg filter by pumping the unpatterned waveguide section. Ridge waveguides were fabricated on InGaAsP/InP laser structures with 8 compressively strained quantum wells.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131710036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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