Millimeter wave monolithic transceivers

Abstract

A significant program Is currently underway 1n the United States to Investigate, develop, and produce a variety of GaAs analog circuits for use 1n microwave and millimeter wave sensors and systems. This represents a “new wave” of RF technology which promises to significantly change system engineering thinking relative to RF Architectures. At millimeter wave frequencies, we look forward to a relatively high level of critical component integration based on MESFET and HEMT device Implementations. These designs will spawn more compact RF front ends with colocated antenna/transceiver functions and innovative packaging concepts which will survive and function 1n a typical military operational environment which includes challenging temperature, shock, and special handling requirements.