Fabrication of Co doped or un-doped ZnO/ Al on glass substrate for sensor Applications

Harapriya Nayak, S. Kamilla
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Abstract

In this work, the different transition metals doped zinc oxide (ZnO) on aluminium (Al) film coated on glass substrate (i.e., ZnO/ Ai)were fabricated for device purposes. Initially, Al thin film on glass substrates was prepared by thermal evaporation technique by taking high purity aluminium metal. To get the desired growth of film, the prepared samples have been doped with the un-doped & Co-doped solution with the help of a modified version of dip-coating that is, chemically wet & dry (CWD) technique which can simultaneously & indeed control the immersion, uplift speed, drying inside and as well as the thermal annealing. The prepared samples were carried out by the X-Ray Diffraction (XRD) analysis for confirmation for crystallization. All samples are polycrystalline nature of Codoped and un-doped ZnO/AI were indicated by the XRD analysis. There were some shifting of peaks obtained in comparison to the reported data which implies that some percentages of Co diffuse into the ZnO matrix as both are similar size. The taken samples show the Ohmic contact nature as it is characterized by current-voltage (I- V) study. This Ohmic nature behaviour of contact between ZnO and Al at interface, can be used in sensing applications at low potential value. This prepared sample can be used as a very good low-cost electrochemical sensing material.
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传感器用玻璃基板上Co掺杂或未掺杂ZnO/ Al的制备
在这项工作中,制备了不同的过渡金属掺杂氧化锌(ZnO)在涂覆在玻璃基板上的铝(Al)薄膜上(即ZnO/ Ai),用于器件目的。最初,采用热蒸发技术以高纯铝为原料,在玻璃基板上制备了铝薄膜。为了获得所需的薄膜生长,在所制备的样品中掺杂未掺杂和共掺杂溶液,并借助一种改进版的浸渍涂层,即化学干湿(CWD)技术,该技术可以同时控制浸渍,提升速度,内部干燥以及热退火。对制备的样品进行了x射线衍射(XRD)分析,以确认其结晶性。XRD分析表明,ZnO/AI共掺杂和未掺杂样品均为多晶。与报道的数据相比,得到了一些峰的移动,这意味着Co的一些百分比扩散到ZnO基体中,因为两者的尺寸相似。所采集的样品显示欧姆接触性质,因为它是由电流-电压(I- V)研究表征的。这种ZnO和Al在界面处接触的欧姆性质行为可用于低电位值的传感应用。所制备的样品可以作为一种很好的低成本电化学传感材料。
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