{"title":"Fabrication of Co doped or un-doped ZnO/ Al on glass substrate for sensor Applications","authors":"Harapriya Nayak, S. Kamilla","doi":"10.1109/APSIT52773.2021.9641494","DOIUrl":null,"url":null,"abstract":"In this work, the different transition metals doped zinc oxide (ZnO) on aluminium (Al) film coated on glass substrate (i.e., ZnO/ Ai)were fabricated for device purposes. Initially, Al thin film on glass substrates was prepared by thermal evaporation technique by taking high purity aluminium metal. To get the desired growth of film, the prepared samples have been doped with the un-doped & Co-doped solution with the help of a modified version of dip-coating that is, chemically wet & dry (CWD) technique which can simultaneously & indeed control the immersion, uplift speed, drying inside and as well as the thermal annealing. The prepared samples were carried out by the X-Ray Diffraction (XRD) analysis for confirmation for crystallization. All samples are polycrystalline nature of Codoped and un-doped ZnO/AI were indicated by the XRD analysis. There were some shifting of peaks obtained in comparison to the reported data which implies that some percentages of Co diffuse into the ZnO matrix as both are similar size. The taken samples show the Ohmic contact nature as it is characterized by current-voltage (I- V) study. This Ohmic nature behaviour of contact between ZnO and Al at interface, can be used in sensing applications at low potential value. This prepared sample can be used as a very good low-cost electrochemical sensing material.","PeriodicalId":436488,"journal":{"name":"2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APSIT52773.2021.9641494","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, the different transition metals doped zinc oxide (ZnO) on aluminium (Al) film coated on glass substrate (i.e., ZnO/ Ai)were fabricated for device purposes. Initially, Al thin film on glass substrates was prepared by thermal evaporation technique by taking high purity aluminium metal. To get the desired growth of film, the prepared samples have been doped with the un-doped & Co-doped solution with the help of a modified version of dip-coating that is, chemically wet & dry (CWD) technique which can simultaneously & indeed control the immersion, uplift speed, drying inside and as well as the thermal annealing. The prepared samples were carried out by the X-Ray Diffraction (XRD) analysis for confirmation for crystallization. All samples are polycrystalline nature of Codoped and un-doped ZnO/AI were indicated by the XRD analysis. There were some shifting of peaks obtained in comparison to the reported data which implies that some percentages of Co diffuse into the ZnO matrix as both are similar size. The taken samples show the Ohmic contact nature as it is characterized by current-voltage (I- V) study. This Ohmic nature behaviour of contact between ZnO and Al at interface, can be used in sensing applications at low potential value. This prepared sample can be used as a very good low-cost electrochemical sensing material.