{"title":"Multivariate Modeling of Heterogeneous Geometrical Surfaces in the Technological Cycle of Manufacturing Silicon Matrixes","authors":"G.V. Perov, A.A. Shauerman","doi":"10.1109/SIBEDM.2006.231997","DOIUrl":null,"url":null,"abstract":"A one-dimensional development model of a non-uniform semiconductor surface with adjusted horizontal type of doping is elaborated during thermal oxidation. The model is adapted to structures - polycrystalline silicon (PC) - oxide. Frameworks of the subsequent model expansion in 3D format for the analysis of electric and charging characteristics in heterogeneous structures are proved","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshops and Tutorials on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2006.231997","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A one-dimensional development model of a non-uniform semiconductor surface with adjusted horizontal type of doping is elaborated during thermal oxidation. The model is adapted to structures - polycrystalline silicon (PC) - oxide. Frameworks of the subsequent model expansion in 3D format for the analysis of electric and charging characteristics in heterogeneous structures are proved
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