A. Zarubin, D. Mokeev, L. Okaevich, A. Tyazhev, M. Bimatov, M. Lelekov, I. Ponomarev
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引用次数: 11
Abstract
In activity the observed data of a life time of non-equilibrium charge carriers in detectors based on GaAs, compensated with Cr are shown On the basis of the analysis of experimental data is established, that in electrical fields with strength in range from 1 to 10 kV/s the values of non-equilibrium electrons and holes life times do not depend on electric field strength It is shown, that using of two miscellaneous techniques results in considerable difference in values of a nonequilibrium holes life time, while the life times of electrons have comparable values.
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