Kate J. Norris, G. Tompa, N. Sbrockey, N. Kobayashi
{"title":"Thermoelectric pellets made of Si nanowires (Presentation Recording)","authors":"Kate J. Norris, G. Tompa, N. Sbrockey, N. Kobayashi","doi":"10.1117/12.2192445","DOIUrl":null,"url":null,"abstract":"Although semiconductor wires exhibit unique properties that would benefit a range of devices, implementation of as-grown wires in a device brings challenges, in particular, for those that require large volume (e.g. thermoelectric (TE) devices). Therefore, a post-growth assembly of sub-micrometer-scale wires into a centimeter-scale structure would open new module architecture. In this paper, TE devices in the form of pellet (~1cm diameter) made of aggregated silicon (Si) wires will be described. Numerous Si wires were assembled into a 3D network with dimensions defined by a quartz ampule. Power generation was demonstrated at operational temperatures ~80°C and the performance was generalized for higher operational temperatures ~800°C.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE NanoScience + Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2192445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Although semiconductor wires exhibit unique properties that would benefit a range of devices, implementation of as-grown wires in a device brings challenges, in particular, for those that require large volume (e.g. thermoelectric (TE) devices). Therefore, a post-growth assembly of sub-micrometer-scale wires into a centimeter-scale structure would open new module architecture. In this paper, TE devices in the form of pellet (~1cm diameter) made of aggregated silicon (Si) wires will be described. Numerous Si wires were assembled into a 3D network with dimensions defined by a quartz ampule. Power generation was demonstrated at operational temperatures ~80°C and the performance was generalized for higher operational temperatures ~800°C.