In electronics controlling and manipulating flow of charged carriers has led to design of numerous functional devices. In photonics, by analogy, this is done through controlling photons and optical waves. However, the challenges and opportunities are different in these two fields. Materials control waves, and as such they can tailor, manipulate, redirect, and scatter electromagnetic waves and photons at will. Recent development in condensed matter physics, nanoscience, and nanotechnology has made it possible to tailor materials with unusual parameters and extreme characteristics and with atomic precision and thickness. One can now construct structures much smaller than the wavelengths of visible light, thus ushering in unprecedented possibilities and novel opportunities for molding fields and waves at the nanoscale with desired functionalities. At such subwavelength scales, sculpting optical fields and waves provides a fertile ground for innovation and discovery. I will discuss some of the exciting opportunities in this area, and forecast some future directions and possibilities.
{"title":"Sculpting Waves (Presentation Recording)","authors":"N. Engheta","doi":"10.1117/12.2223967","DOIUrl":"https://doi.org/10.1117/12.2223967","url":null,"abstract":"In electronics controlling and manipulating flow of charged carriers has led to design of numerous functional devices. In photonics, by analogy, this is done through controlling photons and optical waves. However, the challenges and opportunities are different in these two fields. Materials control waves, and as such they can tailor, manipulate, redirect, and scatter electromagnetic waves and photons at will. Recent development in condensed matter physics, nanoscience, and nanotechnology has made it possible to tailor materials with unusual parameters and extreme characteristics and with atomic precision and thickness. One can now construct structures much smaller than the wavelengths of visible light, thus ushering in unprecedented possibilities and novel opportunities for molding fields and waves at the nanoscale with desired functionalities. At such subwavelength scales, sculpting optical fields and waves provides a fertile ground for innovation and discovery. I will discuss some of the exciting opportunities in this area, and forecast some future directions and possibilities.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129469604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Haney, M. Stiles, Hyun-Woo Lee, A. Manchon, Kyung-Jin Lee
Spintronics aims to utilize the coupling between charge transport and magnetic dynamics to develop improved and novel memory and logic devices. Future progress in spintronics may be enabled by exploiting the spin-orbit coupling present at the interface between thin film ferromagnets and heavy metals. In these systems, applying an in-plane electrical current can induce magnetic dynamics in single domain ferromagnets, or can induce rapid motion of domain wall magnetic textures. There are multiple effects responsible for these dynamics. They include spin-orbit torques and a chiral exchange interaction (the Dzyaloshinskii-Moriya interaction) in the ferromagnet. Both effects arise from the combination of ferromagnetism and spin-orbit coupling present at the interface. There is additionally a torque from the spin current flux impinging on the ferromagnet, arising from the spin hall effect in the heavy metal. Using first principles calculations, we identify spin-orbit hybridization at the ferromagnet-heavy metal interface as central to the spin-orbit torques present in Co-Pt bilayers. We additionally propose that the transverse spin current (from the spin hall effect) is locally enhanced over its bulk value due to scattering at an interface which is oriented normal to the charge current direction.
{"title":"Spin-orbit torques in magnetic bilayers (Presentation Recording)","authors":"P. Haney, M. Stiles, Hyun-Woo Lee, A. Manchon, Kyung-Jin Lee","doi":"10.1117/12.2190068","DOIUrl":"https://doi.org/10.1117/12.2190068","url":null,"abstract":"Spintronics aims to utilize the coupling between charge transport and magnetic dynamics to develop improved and novel memory and logic devices. Future progress in spintronics may be enabled by exploiting the spin-orbit coupling present at the interface between thin film ferromagnets and heavy metals. In these systems, applying an in-plane electrical current can induce magnetic dynamics in single domain ferromagnets, or can induce rapid motion of domain wall magnetic textures. There are multiple effects responsible for these dynamics. They include spin-orbit torques and a chiral exchange interaction (the Dzyaloshinskii-Moriya interaction) in the ferromagnet. Both effects arise from the combination of ferromagnetism and spin-orbit coupling present at the interface. There is additionally a torque from the spin current flux impinging on the ferromagnet, arising from the spin hall effect in the heavy metal. Using first principles calculations, we identify spin-orbit hybridization at the ferromagnet-heavy metal interface as central to the spin-orbit torques present in Co-Pt bilayers. We additionally propose that the transverse spin current (from the spin hall effect) is locally enhanced over its bulk value due to scattering at an interface which is oriented normal to the charge current direction.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123984728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. A. Díaz, Susan Buckhout‐White, M. Ancona, J. Melinger, Igor L. Medintz
Molecular photonic wires (MPWs) present interesting applications in energy harvesting, artificial photosynthesis, and nano-circuitry. MPWs allow the directed movement of energy at the nanoscopic level. Extending the length of the energy transfer with a minimal loss in efficiency would overcome an important hurdle in allowing MPWs to reach their potential. We investigated Homogenous Förster Resonance Energy Transfer (HomoFRET) as a means to achieve this goal. We designed a simple, self-assembled DNA nanostructure with specifically placed dyes (Alexa488-Cy3-Cy3.5-Alexa647-Cy5.5) at a distance of 3.4 nm, a separation at which energy transfer should theoretically be very high. The input of the wire was at 466 nm with an output up to 697 nm. Different structures were studied where the Cy3.5 section of the MPW was extended from one to six repeats. We found that though the efficiency cost is not null, HomoFRET can be extended up to six repeat dyes with only a 22% efficiency loss when compared to a single step system. The advantage is that these six repeats created a MPW which was 17 nm longer, almost 2.5 times the initial length. To confirm the existence of HomoFRET between the Cy3.5 repeats fluorescence lifetime and fluorescence lifetime anisotropy was measured. Under these conditions we are able to demonstrate the energy transfer over a distance of 30.4 nm, with an end-to-end efficiency of 2.0%, by utilizing a system with only five unique dyes.
{"title":"Utilizing homogenous FRET to extend molecular photonic wires beyond 30 nm (Presentation Recording)","authors":"S. A. Díaz, Susan Buckhout‐White, M. Ancona, J. Melinger, Igor L. Medintz","doi":"10.1117/12.2188169","DOIUrl":"https://doi.org/10.1117/12.2188169","url":null,"abstract":"Molecular photonic wires (MPWs) present interesting applications in energy harvesting, artificial photosynthesis, and nano-circuitry. MPWs allow the directed movement of energy at the nanoscopic level. Extending the length of the energy transfer with a minimal loss in efficiency would overcome an important hurdle in allowing MPWs to reach their potential. We investigated Homogenous Förster Resonance Energy Transfer (HomoFRET) as a means to achieve this goal. We designed a simple, self-assembled DNA nanostructure with specifically placed dyes (Alexa488-Cy3-Cy3.5-Alexa647-Cy5.5) at a distance of 3.4 nm, a separation at which energy transfer should theoretically be very high. The input of the wire was at 466 nm with an output up to 697 nm. Different structures were studied where the Cy3.5 section of the MPW was extended from one to six repeats. We found that though the efficiency cost is not null, HomoFRET can be extended up to six repeat dyes with only a 22% efficiency loss when compared to a single step system. The advantage is that these six repeats created a MPW which was 17 nm longer, almost 2.5 times the initial length. To confirm the existence of HomoFRET between the Cy3.5 repeats fluorescence lifetime and fluorescence lifetime anisotropy was measured. Under these conditions we are able to demonstrate the energy transfer over a distance of 30.4 nm, with an end-to-end efficiency of 2.0%, by utilizing a system with only five unique dyes.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129088654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Madon, D. Pham, D. Lacour, A. Anane, R. Bernard, V. Cros, M. Hehn, J. Wegrowe
We measured transverse magneto-thermoelectric voltage on devices made of a Permalloy (Py) line and a transverse electrode made of platinum (Pt), copper (Cu) or bismuth (Bi). We show that the angular dependence of the voltage is the same for Pt and Cu but different with a Bi electrode. We interpret the angular dependence with Pt and Cu electrode as anomalous and planar Nernst and Righi-Leduc effect on Py. The results obtained with a Bi electrode can be explained as the Nernst effect of the electrode itself which overwhelms the signal coming from the Py.
{"title":"Anomalous and planar Righi-Leduc effects measured in ferromagnetic YIG and NiFe (Presentation Recording)","authors":"B. Madon, D. Pham, D. Lacour, A. Anane, R. Bernard, V. Cros, M. Hehn, J. Wegrowe","doi":"10.1117/12.2190101","DOIUrl":"https://doi.org/10.1117/12.2190101","url":null,"abstract":"We measured transverse magneto-thermoelectric voltage on devices made of a Permalloy (Py) line and a transverse electrode made of platinum (Pt), copper (Cu) or bismuth (Bi). We show that the angular dependence of the voltage is the same for Pt and Cu but different with a Bi electrode. We interpret the angular dependence with Pt and Cu electrode as anomalous and planar Nernst and Righi-Leduc effect on Py. The results obtained with a Bi electrode can be explained as the Nernst effect of the electrode itself which overwhelms the signal coming from the Py.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126120171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An optical, two-channel molecular sensor design using surface-plasmon polariton resonance (SPR) in a Mach-Zehnder interferometer was devised for studying the enhancement due to the presence of interferometry. The objective was to detect very small quantities of gas molecules with molecular weights in the range of 17 to 28 Daltons using either the signal from the transmitted laser beam or the interference image that can be computer analyzed. Dry air in humid air and pure ammonia gas diluted in dry air were studied. Initial studies gave detection sensitivities of better than 70 parts per 108 for changes in refractive index of the gas. With interferometry, recorded signals were 40X greater than with the normal SPR technique.
{"title":"Exploring surface plasmon-polariton resonance (SPR) in an interferometer configuration","authors":"P. Yaney, F. Ouchen, J. Grote","doi":"10.1117/12.2193792","DOIUrl":"https://doi.org/10.1117/12.2193792","url":null,"abstract":"An optical, two-channel molecular sensor design using surface-plasmon polariton resonance (SPR) in a Mach-Zehnder interferometer was devised for studying the enhancement due to the presence of interferometry. The objective was to detect very small quantities of gas molecules with molecular weights in the range of 17 to 28 Daltons using either the signal from the transmitted laser beam or the interference image that can be computer analyzed. Dry air in humid air and pure ammonia gas diluted in dry air were studied. Initial studies gave detection sensitivities of better than 70 parts per 108 for changes in refractive index of the gas. With interferometry, recorded signals were 40X greater than with the normal SPR technique.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122487894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Amiruddin Rafiudeen, T. Reddy, Shaheer Cheemadan, M.C. Santhosh Kumar
ZnO possess distinctive characteristics such as low cost, wide band gap (3.36 eV) and large exciton binding energy (60meV). As the band gap lies in ultra violet (UV) region, ZnO is considered as a novel material for the fabrication of ultra violet light emitting diodes (UV-LEDs). However, ZnO being intrinsic n-type semiconductor the key challenge lies in realization of stable and reproducible p-type ZnO. In the present research dual acceptor group-V elements such as P and N are simultaneously doped in ZnO films to obtain the p-type characteristics. The deposition is made by programmable spray pyrolysis technique upon glass substrates at 697K. The optimum doping concentration of P and N were found to be 0.75 at% which exhibits hole concentration of 4.48 x 10^18 cm-3 and resistivity value of 9.6 Ω.cm. The deposited p-ZnO were found to be stable for a period over six months. Highly conducting n-type ZnO films is made by doping aluminum (3 at%) which exhibits higher electron concentration of 1.52 x 10^19 cm-3 with lower electrical resistivity of 3.51 x 10-2 Ω.cm. The structural, morphological, optical and electrical properties of the deposited n-ZnO and p-ZnO thin films are investigated. An efficient p-n homojunction has been fabricated using the optimum p-ZnO:(P,N) and n-ZnO:Al layers. The current–voltage (I–V) characteristics show typical rectifying characteristics of p-n junction with a low turn on voltage. Electroluminescence (EL) studies reveals the fabricated p-n homojunction diodes exhibits strong emission features in ultra-violet (UV) region around 378 nm.
ZnO具有成本低、带隙宽(3.36 eV)、激子结合能大(60meV)等特点。由于带隙位于紫外区，ZnO被认为是制造紫外发光二极管(UV- led)的新材料。然而，ZnO作为本禀n型半导体，其关键挑战在于实现稳定和可再生的p型ZnO。本研究通过在ZnO薄膜中同时掺杂P和N等双受体族v元素来获得P型特性。采用可编程喷雾热解技术在697K温度下在玻璃基板上进行沉积。P和N的最佳掺杂浓度为0.75 at%，空穴浓度为4.48 x 10^18 cm-3，电阻率值为9.6 Ω.cm。发现沉积的p-ZnO在六个多月的时间内是稳定的。通过掺铝(3 at%)制备出高导电性的n型ZnO薄膜，其电子浓度为1.52 x 10^19 cm-3，电阻率为3.51 x 10-2 Ω.cm。研究了n-ZnO和p-ZnO薄膜的结构、形貌、光学和电学性能。采用最佳P - zno:(P,N)和N - zno:Al层制备了高效的P - N同质结。电流-电压(I-V)特性显示了低导通电压下pn结的典型整流特性。电致发光(EL)研究表明，制备的p-n同质结二极管在378 nm左右的紫外区表现出较强的发射特性。
{"title":"Fabrication and characterization of p-ZnO:(P,N)/n-ZnO:Al homojunction ultra-violet (UV) light emitting diodes (Presentation Recording)","authors":"Amiruddin Rafiudeen, T. Reddy, Shaheer Cheemadan, M.C. Santhosh Kumar","doi":"10.1117/12.2187938","DOIUrl":"https://doi.org/10.1117/12.2187938","url":null,"abstract":"ZnO possess distinctive characteristics such as low cost, wide band gap (3.36 eV) and large exciton binding energy (60meV). As the band gap lies in ultra violet (UV) region, ZnO is considered as a novel material for the fabrication of ultra violet light emitting diodes (UV-LEDs). However, ZnO being intrinsic n-type semiconductor the key challenge lies in realization of stable and reproducible p-type ZnO. In the present research dual acceptor group-V elements such as P and N are simultaneously doped in ZnO films to obtain the p-type characteristics. The deposition is made by programmable spray pyrolysis technique upon glass substrates at 697K. The optimum doping concentration of P and N were found to be 0.75 at% which exhibits hole concentration of 4.48 x 10^18 cm-3 and resistivity value of 9.6 Ω.cm. The deposited p-ZnO were found to be stable for a period over six months. Highly conducting n-type ZnO films is made by doping aluminum (3 at%) which exhibits higher electron concentration of 1.52 x 10^19 cm-3 with lower electrical resistivity of 3.51 x 10-2 Ω.cm. The structural, morphological, optical and electrical properties of the deposited n-ZnO and p-ZnO thin films are investigated. An efficient p-n homojunction has been fabricated using the optimum p-ZnO:(P,N) and n-ZnO:Al layers. The current–voltage (I–V) characteristics show typical rectifying characteristics of p-n junction with a low turn on voltage. Electroluminescence (EL) studies reveals the fabricated p-n homojunction diodes exhibits strong emission features in ultra-violet (UV) region around 378 nm.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114563710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Rumyantsev, A. Tarasov, C. Briskina, M. Ryzhkov, V. Markushev, A. Lotin
For the analysis of ZnO luminescence the system of rate equations (SRE) was proposed. It contains a set of parameters that characterizes processes participating in luminescence: zone-zone excitation, excitons formation and recombination, formation and disappearance of photons and surface plasmons (SP). It is shown that experimental ZnO microstructure radiation intensity dependence on photoexcitation level can be approximated by using SRE. Thus, the values of these parameters can be estimated and used for luminescence analysis. This approach was applied for the analysis of ZnO microfilms radiation with different thickness of Ag island film covering. It was revealed that the increase of cover thickness leads to the increase of losses and decrease of probability of photons to SP conversion. In order to take into account visible emission, rate equations for levels populations in band-gap and for corresponding photons and SP were added to SRE. By using such SRE it is demonstrated that the form of visible luminescence intensity dependence on excitation level (P) like P1/3, as obtained elsewhere [1], is possible only in case of donor-acceptor pairs existence. The proposed approach was applied for consideration of experimental results obtained in [5-8] taking into account their interpretation of these results based on assumption about transfer of electrons from defect level in ZnO band-gap to metal and then to conduction band in ZnO. Results of performed calculations using modified SRE revealed that effects observed in these papers can exist under only low pumping level. This result will be experimentally checked later.
{"title":"Using radiation intensity dependence on excitation level for the analysis of surface plasmon resonance effect on ZnO luminescence","authors":"S. Rumyantsev, A. Tarasov, C. Briskina, M. Ryzhkov, V. Markushev, A. Lotin","doi":"10.1117/12.2187397","DOIUrl":"https://doi.org/10.1117/12.2187397","url":null,"abstract":"For the analysis of ZnO luminescence the system of rate equations (SRE) was proposed. It contains a set of parameters that characterizes processes participating in luminescence: zone-zone excitation, excitons formation and recombination, formation and disappearance of photons and surface plasmons (SP). It is shown that experimental ZnO microstructure radiation intensity dependence on photoexcitation level can be approximated by using SRE. Thus, the values of these parameters can be estimated and used for luminescence analysis. This approach was applied for the analysis of ZnO microfilms radiation with different thickness of Ag island film covering. It was revealed that the increase of cover thickness leads to the increase of losses and decrease of probability of photons to SP conversion. In order to take into account visible emission, rate equations for levels populations in band-gap and for corresponding photons and SP were added to SRE. By using such SRE it is demonstrated that the form of visible luminescence intensity dependence on excitation level (P) like P1/3, as obtained elsewhere [1], is possible only in case of donor-acceptor pairs existence. The proposed approach was applied for consideration of experimental results obtained in [5-8] taking into account their interpretation of these results based on assumption about transfer of electrons from defect level in ZnO band-gap to metal and then to conduction band in ZnO. Results of performed calculations using modified SRE revealed that effects observed in these papers can exist under only low pumping level. This result will be experimentally checked later.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122614764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Amplitude and phase contributions to mixed volume holographic gratings were extracted from measured contours of angular selectivity. Holograms for the investigation were recorded in the glassy polymer material with phenan-threnequinone (PQ) using the DPSS CW laser (532 nm) and then self-developed due to molecular diffusion of PQ, reaching diffraction efficiency about 40%. Refractive index and absorbance modulation amplitudes of those holograms were obtained as adjustable parameters from theoretical equations by fitting angular dependencies of zeros and 1st orders diffraction efficiency measured at 450, 473, 532, and 633 nm at the different stages of hologram development. Mixed gratings manifest themselves in asymmetrical transmittance selectivity contours with one minimum and one maximum shifted with respect to the Bragg angle, while symmetrical contours with a minimum or a maximum at the Bragg angle are characteristic of pure phase and amplitude gratings, respectively. In the course of a hologram development, it converts from a predominantly amplitude-mixed to almost purely phase one in the case of readout using a light within the absorption band of PQ and maintains the phase nature besides it. The value of refractive index amplitude is ranging from 5×10-6 to 10-4 and the value of absorbance amplitude is up to 140 m-1.
{"title":"Determination of refractive index and absorbance modulation amplitudes from angular selectivity of holograms in polymer material with phenanthrenequinone","authors":"V. Borisov, A. Veniaminov","doi":"10.1117/12.2194153","DOIUrl":"https://doi.org/10.1117/12.2194153","url":null,"abstract":"Amplitude and phase contributions to mixed volume holographic gratings were extracted from measured contours of angular selectivity. Holograms for the investigation were recorded in the glassy polymer material with phenan-threnequinone (PQ) using the DPSS CW laser (532 nm) and then self-developed due to molecular diffusion of PQ, reaching diffraction efficiency about 40%. Refractive index and absorbance modulation amplitudes of those holograms were obtained as adjustable parameters from theoretical equations by fitting angular dependencies of zeros and 1st orders diffraction efficiency measured at 450, 473, 532, and 633 nm at the different stages of hologram development. Mixed gratings manifest themselves in asymmetrical transmittance selectivity contours with one minimum and one maximum shifted with respect to the Bragg angle, while symmetrical contours with a minimum or a maximum at the Bragg angle are characteristic of pure phase and amplitude gratings, respectively. In the course of a hologram development, it converts from a predominantly amplitude-mixed to almost purely phase one in the case of readout using a light within the absorption band of PQ and maintains the phase nature besides it. The value of refractive index amplitude is ranging from 5×10-6 to 10-4 and the value of absorbance amplitude is up to 140 m-1.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"9545 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131222628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Ponomarenko, N. Surin, O. Borshchev, M. Skorotetcky, A. Muzafarov
Nanostructured organosilicon luminophores (NOLs) are branched molecular structures having two types of covalently bonded via silicon atoms organic luminophores with efficient Förster energy transfer between them. They combine the best properties of organic luminophores and inorganic quantum dots: high absorption cross-section, excellent photoluminescence quantum yield, fast luminescence decay time, good processability and low toxicity. A smart choice of organic luminophores allowed us to design and synthesize a library of NOLs, absorbing from VUV to visible region and emitting at the desired wavelengths from 390 to 650 nm. They can be used as unique wavelength shifters in plastic scintillators and other applications.
{"title":"Nanostructured organosilicon luminophores as a new concept of nanomaterials for highly efficient down-conversion of light","authors":"S. Ponomarenko, N. Surin, O. Borshchev, M. Skorotetcky, A. Muzafarov","doi":"10.1117/12.2187281","DOIUrl":"https://doi.org/10.1117/12.2187281","url":null,"abstract":"Nanostructured organosilicon luminophores (NOLs) are branched molecular structures having two types of covalently bonded via silicon atoms organic luminophores with efficient Förster energy transfer between them. They combine the best properties of organic luminophores and inorganic quantum dots: high absorption cross-section, excellent photoluminescence quantum yield, fast luminescence decay time, good processability and low toxicity. A smart choice of organic luminophores allowed us to design and synthesize a library of NOLs, absorbing from VUV to visible region and emitting at the desired wavelengths from 390 to 650 nm. They can be used as unique wavelength shifters in plastic scintillators and other applications.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130924176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Azadi Kenari, A. Sari, M. Ghoranneviss, M. Hantehzadeh
In this paper the characteristics of Tantalum nanoparticles produced by laser ablation method is investigated experimentally with a first harmonic of a Q-switched Nd:YAG laser of 1064 nm wavelengths at 6 ns pulse. Spherical nanoparticles of Ta and tantalum oxide have been produced successfully by using a Ta target in ethanol. The fluency of laser was 0.9 J/cm2. The samples were characterized by using transmission electron microscopy (TEM), photo luminescence (PL), X-ray diffraction (XRD) and absorption spectroscopy analyses. The size of produced nanoparticles is mainly in the range between 10–20 nm, structural and phase compositional of produced Ta nanoparticles.
{"title":"Investigation of Ta nanoparticles characteristics produced by laser ablation method","authors":"F. Azadi Kenari, A. Sari, M. Ghoranneviss, M. Hantehzadeh","doi":"10.1117/12.2180754","DOIUrl":"https://doi.org/10.1117/12.2180754","url":null,"abstract":"In this paper the characteristics of Tantalum nanoparticles produced by laser ablation method is investigated experimentally with a first harmonic of a Q-switched Nd:YAG laser of 1064 nm wavelengths at 6 ns pulse. Spherical nanoparticles of Ta and tantalum oxide have been produced successfully by using a Ta target in ethanol. The fluency of laser was 0.9 J/cm2. The samples were characterized by using transmission electron microscopy (TEM), photo luminescence (PL), X-ray diffraction (XRD) and absorption spectroscopy analyses. The size of produced nanoparticles is mainly in the range between 10–20 nm, structural and phase compositional of produced Ta nanoparticles.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134039038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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