Enhanced CDMA performance from an InGaP/InGaAsN/GaAs N-p-N double heterojunction bipolar transistor

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049076

R. Yarborough, B. Landini, R. Welser, J. Yang, T. Henderson

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引用次数: 2

Abstract

We have demonstrated the DC characteristics and CDMA performance of an NpN InGaP/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT) and compared the results to conventional InGaP/GaAs HBTs. A 100 mV reduction in base-emitter turn-on voltage and 35 mV reduction in offset voltage is established relative to InGaP/GaAs HBTs using a low energy-gap InGaAsN alloy base material and optimized heterointerfaces. InGaP/InGaAsN DHBT structures with high p-type doping levels (/spl sim/3/spl times/10/sup 19/ cm/sup -3/) have demonstrated DC current gains of /spl beta/=70 at 350 /spl Omega///spl square/ base sheet resistance. The DC current gain of InGaP/InGaAsN DHBTs has been improved by 46 % by grading the base layer composition. InGaAsN DHBTs have demonstrated 1.9 GHz CDMA IS-95 performance of 21 dBm output power (0.31 mW//spl mu/m/sup 2/ - 933 mW/mm), with 18.5 dB associated gain and greater than 53 % power-added efficiency at 45 dBc ACPR and 3 V operation. This represents an 83 mW/mm increase in output power and 3.8 percentage points improvement in PAE performance relative to InGaP/GaAs HBTs.

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InGaP/InGaAsN/GaAs N-p-N双异质结双极晶体管提高CDMA性能

我们展示了NpN InGaP/InGaAsN/GaAs双异质结双极晶体管(DHBT)的直流特性和CDMA性能，并将结果与传统的InGaP/GaAs HBTs进行了比较。使用低能隙InGaAsN合金基材和优化的异质界面，相对于InGaP/GaAs HBTs，基极-发射极导通电压降低了100 mV，偏置电压降低了35 mV。具有高p型掺杂水平(/spl sim/3/spl times/10/sup 19/ cm/sup -3/)的InGaP/InGaAsN DHBT结构在350 /spl Omega/// /spl square/基片电阻下显示出/spl beta/=70的直流电流增益。通过对基层组成进行分级，InGaP/InGaAsN dhbt的直流电流增益提高了46%。InGaAsN dhbt已经展示了1.9 GHz CDMA IS-95的性能，输出功率为21 dBm (0.31 mW//spl mu/m/sup 2/ - 933 mW/mm)，相关增益为18.5 dB，在45 dBc ACPR和3 V工作时的功率增加效率大于53%。与InGaP/GaAs hbt相比，输出功率增加了83 mW/mm, PAE性能提高了3.8个百分点。

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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