The transient photo-dark current ratio of a-Si:H p-i-n photodiode

Abstract

In this paper the transient photo-dark current ratios (PDCR)of p-i-n a-Si:H amorphous silicon photodiode on voltage pulse at constant light and voltage pulses were measured and compared. The results show opposite PDCR behaviour of monochrome and chromatic transients in these two cases. From the measured dark current and the photocurrent, which are both proportional to the instantaneous charge change, the charge was calculated using the FFT method. The obtained results show that the depletion charge increments are much smaller than the stored ones.