T. Calin, R. Velazco, M. Nicolaidis, S. Moss, S. Lalumondiere, V. Tran, R. Koga, K. Clark
{"title":"Topology-related upset mechanisms in design hardened storage cells","authors":"T. Calin, R. Velazco, M. Nicolaidis, S. Moss, S. Lalumondiere, V. Tran, R. Koga, K. Clark","doi":"10.1109/RADECS.1997.698979","DOIUrl":null,"url":null,"abstract":"The SEU hardness of a new CMOS storage cell based on latch redundancy has been analyzed using a laser beam simulation. We detected and investigated topology-dependent upset mechanisms due to charge collection at two sensitive nodes using a laser excitation between the nodes. Compact upset-immune device topologies are proposed, using spacing and isolation techniques for simultaneously sensitive node pairs, to achieve high immunity levels required in critical applications.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1997.698979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
The SEU hardness of a new CMOS storage cell based on latch redundancy has been analyzed using a laser beam simulation. We detected and investigated topology-dependent upset mechanisms due to charge collection at two sensitive nodes using a laser excitation between the nodes. Compact upset-immune device topologies are proposed, using spacing and isolation techniques for simultaneously sensitive node pairs, to achieve high immunity levels required in critical applications.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
