Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698964
A. L. Tomashuk, E. Dianov, K. Golant, R. Khrapko, D. Spinov
Gamma-radiation-induced absorption spectra (2.15 MGy(Si)) are compared in N-doped and pure silica fibers fabricated by surface plasma CVD-process under different regimes with the aim to reveal the chief absorption mechanisms in the telecom spectral windows and to work out an optimum fiber design. The long wavelength absorption edge is shown to be the main absorption mechanism at megagray doses. Its value increases with increasing bonded hydrogen concentration in the fiber glass network and is slightly greater in N-doped fibers. No nitrogen-related color centers have been revealed in the short wavelength loss edge, which is determined by chlorine impurity in silica.
{"title":"Performance of special radiation-hardened optical fibers intended for use in the telecom spectral windows at a megagray level","authors":"A. L. Tomashuk, E. Dianov, K. Golant, R. Khrapko, D. Spinov","doi":"10.1109/RADECS.1997.698964","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698964","url":null,"abstract":"Gamma-radiation-induced absorption spectra (2.15 MGy(Si)) are compared in N-doped and pure silica fibers fabricated by surface plasma CVD-process under different regimes with the aim to reveal the chief absorption mechanisms in the telecom spectral windows and to work out an optimum fiber design. The long wavelength absorption edge is shown to be the main absorption mechanism at megagray doses. Its value increases with increasing bonded hydrogen concentration in the fiber glass network and is slightly greater in N-doped fibers. No nitrogen-related color centers have been revealed in the short wavelength loss edge, which is determined by chlorine impurity in silica.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"571 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116065141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698915
R. Koga, S. Penzin, K. Crawford, W. Crain
The single event functional interrupt (SEFI) sensitivity of several types of microcircuits is measured with heavy ions. While simple microcircuits have not been affected by SEFI, many complex microcircuits are vulnerable to it in varying degrees. Although there are many causes for SEFIs, ion irradiation testing in conjunction with an understanding of device architecture helps refine techniques which can be used to lessen the ill effects caused by SEFI.
{"title":"Single event functional interrupt (SEFI) sensitivity in microcircuits","authors":"R. Koga, S. Penzin, K. Crawford, W. Crain","doi":"10.1109/RADECS.1997.698915","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698915","url":null,"abstract":"The single event functional interrupt (SEFI) sensitivity of several types of microcircuits is measured with heavy ions. While simple microcircuits have not been affected by SEFI, many complex microcircuits are vulnerable to it in varying degrees. Although there are many causes for SEFIs, ion irradiation testing in conjunction with an understanding of device architecture helps refine techniques which can be used to lessen the ill effects caused by SEFI.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114463456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698940
A. Nikiforov, V.V. Bykov, V. S. Figurov, A. Chumakov, P. Skorobogatov, V. A. Telets
CMOS IC dose rate latch-up was investigated within 10 to 100/spl deg/C temperature range with pulsed laser simulator and flash X-ray machine. Devices were latch-up free at room temperature while either permanent latch-up or latch-up windows were detected in the range above 40/spl deg/C. The phenomenon analysis is performed.
{"title":"Latch-up windows tests in high temperature range","authors":"A. Nikiforov, V.V. Bykov, V. S. Figurov, A. Chumakov, P. Skorobogatov, V. A. Telets","doi":"10.1109/RADECS.1997.698940","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698940","url":null,"abstract":"CMOS IC dose rate latch-up was investigated within 10 to 100/spl deg/C temperature range with pulsed laser simulator and flash X-ray machine. Devices were latch-up free at room temperature while either permanent latch-up or latch-up windows were detected in the range above 40/spl deg/C. The phenomenon analysis is performed.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124051822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698978
S. Vasiliev, E. Dianov, K. Golant, O. Medvedkov, A. L. Tomashuk, V. Karpov, M. V. Grekov, A. Kurkov, B. Leconte, P. Niay
In-fiber Bragg and long-period gratings as well as Mach-Zehnder interferometers based on germanium- and nitrogen-doped silica fibers have been investigated under /spl gamma/-rays. The majority of the experimental results suggest that both types of gratings in both types of fibers are stable with respect to /spl gamma/-ray doses of up to 1.47 MGy.
{"title":"Performance of Bragg and long-period gratings written in N- and Ge-doped silica fibers under /spl gamma/-radiation","authors":"S. Vasiliev, E. Dianov, K. Golant, O. Medvedkov, A. L. Tomashuk, V. Karpov, M. V. Grekov, A. Kurkov, B. Leconte, P. Niay","doi":"10.1109/RADECS.1997.698978","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698978","url":null,"abstract":"In-fiber Bragg and long-period gratings as well as Mach-Zehnder interferometers based on germanium- and nitrogen-doped silica fibers have been investigated under /spl gamma/-rays. The majority of the experimental results suggest that both types of gratings in both types of fibers are stable with respect to /spl gamma/-ray doses of up to 1.47 MGy.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126445767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698984
M. Oldfield, C. Underwood
A single event upset (SEU) prediction tool, PRISM (Protons In Semi-conductor Materials) has been used to model the proton induced upset rate in Texas TMS4416 DRAMs on-board the UoSAT-2 micro-satellite. Good agreement is found between the observed and theoretically determined SEU and MBU (multiple-bit upset) rates for this device.
{"title":"Comparison between observed and theoretically determined SEU rates in the TEXAS TMS4416 DRAMs on-board the UoSAT-2 micro-satellite","authors":"M. Oldfield, C. Underwood","doi":"10.1109/RADECS.1997.698984","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698984","url":null,"abstract":"A single event upset (SEU) prediction tool, PRISM (Protons In Semi-conductor Materials) has been used to model the proton induced upset rate in Texas TMS4416 DRAMs on-board the UoSAT-2 micro-satellite. Good agreement is found between the observed and theoretically determined SEU and MBU (multiple-bit upset) rates for this device.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128005458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698828
A. Johnston
The pace of device scaling has increased rapidly in recent years. Experimental CMOS devices have been produced with feature sizes below 0.1 /spl mu/m, demonstrating that devices with feature sizes between 0.1 and 0.25 /spl mu/m will likely be available in mainstream technologies after the year 2000. This paper discusses how the anticipated changes in device dimensions and design are likely to affect their radiation response in space environments. Traditional problems, such as total dose effects, SEU and latchup are discussed, along with new phenomena. The latter include hard errors from heavy ions (microdose and gate-rupture errors), and complex failure modes related to advanced circuit architecture. The main focus of the paper is on commercial devices, which are displacing hardened device technologies in many space applications. However, the impact of device scaling on hardened devices is also discussed.
{"title":"Radiation effects in advanced microelectronics technologies","authors":"A. Johnston","doi":"10.1109/RADECS.1997.698828","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698828","url":null,"abstract":"The pace of device scaling has increased rapidly in recent years. Experimental CMOS devices have been produced with feature sizes below 0.1 /spl mu/m, demonstrating that devices with feature sizes between 0.1 and 0.25 /spl mu/m will likely be available in mainstream technologies after the year 2000. This paper discusses how the anticipated changes in device dimensions and design are likely to affect their radiation response in space environments. Traditional problems, such as total dose effects, SEU and latchup are discussed, along with new phenomena. The latter include hard errors from heavy ions (microdose and gate-rupture errors), and complex failure modes related to advanced circuit architecture. The main focus of the paper is on commercial devices, which are displacing hardened device technologies in many space applications. However, the impact of device scaling on hardened devices is also discussed.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"47 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132556311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698957
S. Metzger, H. Henschel, O. Kohn, W. Lennartz, H. U. Schmidt
We present an experimental determination of the radiation response of commercial fibre optic transmitters and receivers for Local Area Networks. The transmission during irradiation was tested with analog as well as digital signals. We studied the radiation susceptibility up to a total /sup 60/Co gamma dose of 100 kGy and up to 10/sup 12/ neutrons/cm/sup 2/ (14 MeV). The results show that the components are working well up to these dose and neutron fluence values.
{"title":"Radiation hardness of a low-cost point-to-point fibre optic data communication system","authors":"S. Metzger, H. Henschel, O. Kohn, W. Lennartz, H. U. Schmidt","doi":"10.1109/RADECS.1997.698957","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698957","url":null,"abstract":"We present an experimental determination of the radiation response of commercial fibre optic transmitters and receivers for Local Area Networks. The transmission during irradiation was tested with analog as well as digital signals. We studied the radiation susceptibility up to a total /sup 60/Co gamma dose of 100 kGy and up to 10/sup 12/ neutrons/cm/sup 2/ (14 MeV). The results show that the components are working well up to these dose and neutron fluence values.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131833195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698904
S. Dowling, D. Strobel
The effect of eight encapsulant materials on bipolar device total dose response, at low (0.01 rads s/sup -1/[Si]) dose rates was studied. Each material was applied to devices with and without their passivation layer. Gain degradation was studied.
{"title":"The effect of polymer package materials on device total dose response at low dose rates","authors":"S. Dowling, D. Strobel","doi":"10.1109/RADECS.1997.698904","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698904","url":null,"abstract":"The effect of eight encapsulant materials on bipolar device total dose response, at low (0.01 rads s/sup -1/[Si]) dose rates was studied. Each material was applied to devices with and without their passivation layer. Gain degradation was studied.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124121282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698901
C. Lee, A. Johnston
Two different 12-bit analog-to-digital converter technologies, CMOS and BiCMOS, from Burr-Brown were compared for total dose responses. The BiCMOS converter appears to be a better candidate for space applications. CMOS devices showed larger degradation with both high dose rate (HDR) and low dose rate (LDR). An external voltage reference can be used for a radiation hardened process 12-bit converter from Analog Devices to maintain accuracy up to 1 Mrad(Si). DATEL's 16-bit hybrid converter showed a low failure level with HDR.
{"title":"Comparison of total dose responses on high resolution analog-to-digital converter technologies","authors":"C. Lee, A. Johnston","doi":"10.1109/RADECS.1997.698901","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698901","url":null,"abstract":"Two different 12-bit analog-to-digital converter technologies, CMOS and BiCMOS, from Burr-Brown were compared for total dose responses. The BiCMOS converter appears to be a better candidate for space applications. CMOS devices showed larger degradation with both high dose rate (HDR) and low dose rate (LDR). An external voltage reference can be used for a radiation hardened process 12-bit converter from Analog Devices to maintain accuracy up to 1 Mrad(Si). DATEL's 16-bit hybrid converter showed a low failure level with HDR.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117352067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698909
N. G. Tarr, G. Mackay, K. Shortt, I. Thomson
MOSFET dosimeters incorporating an electrically floating polysilicon gate have been fabricated in a commercial CMOS technology. Charge is placed on the floating gate by tunnelling from a small overlapping injector gate. Subsequent irradiation partially discharges the floating gate, producing a change in threshold voltage which can be used to infer the absorbed dose. No external power source is required during this sensing period. Sensitivities up to 70 mV Gy/sup -1/ (0.7 mV/rad) have been obtained for temperature-compensated matched-pair dosimeters under /sup 60/Co gamma irradiation.
{"title":"A floating gate MOSFET dosimeter requiring no external bias supply","authors":"N. G. Tarr, G. Mackay, K. Shortt, I. Thomson","doi":"10.1109/RADECS.1997.698909","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698909","url":null,"abstract":"MOSFET dosimeters incorporating an electrically floating polysilicon gate have been fabricated in a commercial CMOS technology. Charge is placed on the floating gate by tunnelling from a small overlapping injector gate. Subsequent irradiation partially discharges the floating gate, producing a change in threshold voltage which can be used to infer the absorbed dose. No external power source is required during this sensing period. Sensitivities up to 70 mV Gy/sup -1/ (0.7 mV/rad) have been obtained for temperature-compensated matched-pair dosimeters under /sup 60/Co gamma irradiation.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129395234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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