{"title":"Very Low-Intermodulation GaAs Mixers with Negative Feedback","authors":"K. Onodera, M. Muraguchi","doi":"10.1109/EUMA.1994.337283","DOIUrl":null,"url":null,"abstract":"A novel circuit configuration for GaAs FET mixers is proposed. An RC negative feedback technique on the drain LO injection GaAs FET mixer brings about substantial improvement in the 3rd-order intermodulation distortion property without conversion gain falloff. This effect is still more remarkable with higher LO power at the drain. Measured performance of a fabricated 1.9-GHz-band MMIC GaAs FET mixer shows more than an 8-dB improvement in the 3rd-order intermodulation intercept point over a conventional GaAs FET mixer with increased conversion gain.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1994 24th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1994.337283","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A novel circuit configuration for GaAs FET mixers is proposed. An RC negative feedback technique on the drain LO injection GaAs FET mixer brings about substantial improvement in the 3rd-order intermodulation distortion property without conversion gain falloff. This effect is still more remarkable with higher LO power at the drain. Measured performance of a fabricated 1.9-GHz-band MMIC GaAs FET mixer shows more than an 8-dB improvement in the 3rd-order intermodulation intercept point over a conventional GaAs FET mixer with increased conversion gain.
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