{"title":"III–V compound semiconductor transistors–from planar to nanowire structures","authors":"D. Nirmal, J. Ajayan","doi":"10.1049/pbcs073g_ch1","DOIUrl":null,"url":null,"abstract":"In this chapter, many aspects of III-V semiconductor transistors were reviewed. The following topics was discussed: epitaxial growth techniques; heterostructure and quantum well; heterojunction bipolar transistors; high electron mobility transistors; quantum well MOSFETs; and nanowire field effect transistors.","PeriodicalId":417544,"journal":{"name":"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/pbcs073g_ch1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
In this chapter, many aspects of III-V semiconductor transistors were reviewed. The following topics was discussed: epitaxial growth techniques; heterostructure and quantum well; heterojunction bipolar transistors; high electron mobility transistors; quantum well MOSFETs; and nanowire field effect transistors.
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