Measurement and Comparison of Several Pass Transistor Logic Styles in a 350nm Technology

Abstract

The performance of digital circuits can be improved by more efficient implementation. For certain circuits this can be done by using pass transistor logic. This paper compares pass transistor logic styles with the standard CMOS logic style. It will be shown that pass transistor logic is able to outperform the standard approach, not only by simulation but by measurements in silicon. Measurements have been executed over a temperature range from -40°C to 80°C and a supply voltage range from 2.7V to 3.6V. Simulation models are also verified through a comparison of the real measured data with simulation data.