Influence of doping profile of high doped emitters on solar cells performances

Abstract

In this paper, we evaluate the throughput of a low-pressure diffusion tube furnace in order to realize uniform industrial phosphorous emitters p-type silicon solar cells. The low-pressure tube furnace is designed to obtain emitter standard sheet resistances of about 60 ohm/sq and wafer uniformity less than 3 %. POCl3 and O2 gas as a precursor for diffusion is described and the thermal behavior of the so called diffusion furnace is studied. A control model has been derived from some previous works to achieve better wafer to wafer temperature distribution. Our result proves that we can target certain electrical properties only by the manipulation and optimization of doping profile and by the addition of multiple temperature ramps to achieve POCl3 diffusion.