{"title":"Non-Volatile Phase Change Memory and Its Fabrication Technology","authors":"A. Balashov, N. Balan, A. Kalinin","doi":"10.1109/SIBEDM.2007.4292931","DOIUrl":null,"url":null,"abstract":"This paper describes the non-volatile phase change memory structure without access transistor in the memory array. The method of the device fabricating on the standard CMOS wafer (e.g., 65 nm) is proposed. The method assumes the application of the custom cluster equipment with a nanoimprint tool. This cluster is used to form additional layers on the CMOS wafer to create the storage array. UV nanoimprint is used instead of the optical lithography.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2007.4292931","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper describes the non-volatile phase change memory structure without access transistor in the memory array. The method of the device fabricating on the standard CMOS wafer (e.g., 65 nm) is proposed. The method assumes the application of the custom cluster equipment with a nanoimprint tool. This cluster is used to form additional layers on the CMOS wafer to create the storage array. UV nanoimprint is used instead of the optical lithography.
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