S. Amon, D. Vrtacnik, D. Rsnik, D. Križaj, U. Aljancic, M. Mozek
{"title":"PTAT sensors based on SJFETs","authors":"S. Amon, D. Vrtacnik, D. Rsnik, D. Križaj, U. Aljancic, M. Mozek","doi":"10.1109/MELCON.2000.880055","DOIUrl":null,"url":null,"abstract":"A new PTAT temperature sensor is studied. Sensor structure is based on the recently introduced SJFET approach, enabling device isolation/integration on the same chip and being compatible with micromachining. The approach is based on the well-established discrete silicon device bipolar technology. Test PTAT structures were designed, fabricated and characterized. Measurements on fabricated test PTAT structures revealed good sensitivity, stability and linearity of sensor response.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MELCON.2000.880055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new PTAT temperature sensor is studied. Sensor structure is based on the recently introduced SJFET approach, enabling device isolation/integration on the same chip and being compatible with micromachining. The approach is based on the well-established discrete silicon device bipolar technology. Test PTAT structures were designed, fabricated and characterized. Measurements on fabricated test PTAT structures revealed good sensitivity, stability and linearity of sensor response.
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