A. Labrujere, T. Klaassen, W. Wenckebach, C. Foxon
{"title":"Far infrared photoconductivity experiments on the si donor in gaas","authors":"A. Labrujere, T. Klaassen, W. Wenckebach, C. Foxon","doi":"10.1109/irmm.1987.9127018","DOIUrl":null,"url":null,"abstract":"The far infrared photoconductivity of Si doped GaAs has been studied using an optically pumped FIR laser working in the 10-150 cm range. At temperatures between H and 10 K in magnetic fields up to 12 T an almost complete set of transitions from the shallow (Si) donor groundstate to the excited hydrogenic levels (n = 2,3,4) is observed. The obtained field dependence of the energy levels is in good agreement with theoretical calculations.","PeriodicalId":399243,"journal":{"name":"1987 Twelth International Conference on Infrared and Millimeter Waves","volume":"322 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 Twelth International Conference on Infrared and Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/irmm.1987.9127018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The far infrared photoconductivity of Si doped GaAs has been studied using an optically pumped FIR laser working in the 10-150 cm range. At temperatures between H and 10 K in magnetic fields up to 12 T an almost complete set of transitions from the shallow (Si) donor groundstate to the excited hydrogenic levels (n = 2,3,4) is observed. The obtained field dependence of the energy levels is in good agreement with theoretical calculations.
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