{"title":"An 11.1nJ-Start-up 16/20MHz Crystal Oscillator with Multi-Path Feedforward Negative Resistance Boosting and Optional Dynamic Pulse Width Injection","authors":"Xiaoyang Wang, P. Mercier","doi":"10.1109/CICC48029.2020.9075884","DOIUrl":null,"url":null,"abstract":"This paper presents a fast start-up crystal oscillator (XO) that reduces both start-up time and energy via an elegantly effective muti-path feedforward ∣ RN ∣ boosting technique. To further improve start-up speed, yet with a more energy/cost-favorable imprecise on-chip ring oscillator, an optional dynamic pulse width (DPW) injection is also proposed. The proposed fast start-up technique is implemented in 65nm process and works with 20MHz and 16MHz crystals, achieve start-up times of 30μs and 34μs while consuming 11.1nJ and 13.2nJ, respectively. Multiple chips are measured over temperature and supply voltage to verify the robustness of the employed techniques.","PeriodicalId":409525,"journal":{"name":"2020 IEEE Custom Integrated Circuits Conference (CICC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Custom Integrated Circuits Conference (CICC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC48029.2020.9075884","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper presents a fast start-up crystal oscillator (XO) that reduces both start-up time and energy via an elegantly effective muti-path feedforward ∣ RN ∣ boosting technique. To further improve start-up speed, yet with a more energy/cost-favorable imprecise on-chip ring oscillator, an optional dynamic pulse width (DPW) injection is also proposed. The proposed fast start-up technique is implemented in 65nm process and works with 20MHz and 16MHz crystals, achieve start-up times of 30μs and 34μs while consuming 11.1nJ and 13.2nJ, respectively. Multiple chips are measured over temperature and supply voltage to verify the robustness of the employed techniques.